IRG4BC10SD-S ,600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak packageFeaturesC• Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to ..
IRG4BC10UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures CES UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz i ..
IRG4BC15UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageapplications• Compatible with high voltage Gate Driver IC's• Allows simpler gate driveTO-220ABAbsol ..
IRG4BC15UD-S ,600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak packageapplications Compatible with high voltage Gate Driver IC's Allows simpler gate drive2D PakTO-26 ..
IRG4BC15UD-SPBF ,600V UltraFast 10-30 kHz Copack IGBT in a D2-Pak packageapplications• Compatible with high voltage Gate Driver IC's• Allows simpler gate drive2D PakTO-262I ..
IRG4BC20F ,600V Fast 1-8 kHz Discrete IGBT in a TO-220AB packageFeatures C Fast: Optimized for medium operatingV = 600VCES frequencies ( 1-5 kHz in hard switchi ..
ISO-130U ,Brown Corporation - High IMR, Low Cost ISOLATION AMPLIFIER
ISO130UB ,Brown Corporation - High IMR, Low Cost ISOLATION AMPLIFIER
ISO150AUG4 ,Dual, Isolated, Bi-Directional Digital Coupler 12-SOP -40 to 85
ISO1540DR ,2.5 kVrms Isolated Bidirectional Clock, Bidirectional I2C Isolators 8-SOIC -40 to 125Features 3 Description2The ISO1540 and ISO1541 devices are low-power,1• Isolated Bidirectional, I C ..
ISO15DW ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85FEATURES From: 4000-V 560-V V per IEC....Rev 2) To: 4000-V V , 560-V V ,peak peak IORM PK IOTM PK I ..
ISO15DWR ,Isolated 3.3-V Half-Duplex RS-485 Transceivers 16-SOIC -40 to 85Features 3 DescriptionThe ISO15 is an isolated half-duplex differential line1• Meets or Exceeds TIA ..
IRG4BC10SD-L-IRG4BC10SD-S
600V DC-1 kHz (Standard) Copack IGBT in a TO-262 package
International
TGiR Rectifier
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
PD - 94255
IRG4BC10SD-S
IRG4BC10SD-L
Standard Speed
Features
. Extremely low voltage drop 1.1Vtyp. @ 2A
. S-Series: Minimizes power dissipation at up to 3
KHz PWM frequency in inverter drives, up to 4
KHz in brushless DC drives.
. Very Tight Vce(on) distribution
. IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in bridge configurations
I Industry standard D2Pak & TO-262 packages
C CoPack IGBT
VCES = 600V
VCE(on) typ. = 1.10V
E @VGE=15V, lc = 2.0A
n-channel
Benefits
. Generation 4 IGBT's offer highest efficiencies
available
. IGBT's optimized for specific application conditions
. HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
. Lower losses than MOSFET's conduction and
Diode losses
Absolute Maximum Ratings
'iri1rit'ps'
D2Pak TO-262
IRG4BC10SD-S IRG4BC10SD-L
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ Tc = 25°C Continuous Collector Current 14
lc @ Tc = 100°C Continuous Collector Current 8.0
ICM Pulsed Collector Current co 18 A
G, Clamped Inductive Load Current © 18
IF @ Tc = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 18
VGE Gate-to-Emitter Voltage 1 20 V
Po @ Tc = 25°C Maximum Power Dissipation 38
Pro @ Tc = 100°C Maximum Power Dissipation 15 W
T: Operating Junction and -55 to +150
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 sec.
300 (0.063
in. (1.6mm) from case)
Thermal Resistance
Parameter Min Typ. Max. Units
Raw; Junction-to-Case - IGBT - - 3.3
Rsoc Junction-to-Case - Diode - - 7.0 °C/W
Recs Case-to-Sink, flat, greased surface - 0.50 -
ReJA Junction-to-Ambient, typical socket mount (S) - - 80
ReJA Junction-to-Ambient (PCB Mount, steady state)© - - 40
Wt Weight - 2.0(0.07) - g (oz)
1
06/12l01
IRG4BC10SD-S/L
International
TOR Rectifier
Electrical Characteristics @ T J = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emilie, Breakdown Voltages 600 - - V VGE = 0V, k: = 250PA
AV(BR)CEs/ATJ Temperature Coeff. of Breakdown Voltage - 0.64 - V/°C VGE = 0V, Ic = 1.0mA
Vcaon) Collector-to-Emitter Saturation Voltage - 1.58 1.8 lc = 8.0A VGE = 15V
- 2.05 - V Ic = 14.0A See Fig. 2, 5
- 1.68 - Ic = 8.0A, T: = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.0 VCE = VGE, k: = 250PA
AVGEWATJ Temperature Coeff. of Threshold Voltage - -9.5 - mV/°C VCE = VGE, k: = 250PA
gfe Forward TransconductanceG) 3.65 5.48 - S VCE = 100V, lc =8.0A
ICES Zero Gate Voltage Collector Current - - 250 pA VGE = 0V, VCE = 600V
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V Ic =4.0A See Fig. 13
- 1.4 1.7 lc =4.0A, T: = 150°C
IGES Gate-to-Emitter Leakage Current - - A100 nA VGE = 120V
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
% Total Gate Charge (turn-on) - 15 22 lc = 8.0A
Qge Gate - Emitter Charge (turn-on) - 2.42 3.6 nC Vcc = 400V See Fig. 8
Qgc Gate - Collector Charge (turn-on) - 6.53 9.8 VGE = 15V
td(on) Turn-On Delay Time - 76 - To = 25°C
tr Rise Time - 32 - ns k: = 8.0A, Vcc = 480V
tu(ott) Turn-Off Delay Time - 815 1200 VGE = 15V, Rs = 1009
tr Fall Time - 720 1080 Energy losses include "tail" and
Eon Turn-On Switching Loss - 0.31 - diode reverse recovery.
Es, Turn-Off Switching Loss - 3.28 - mJ See Fig. 9, 10, 18
ES Total Switching Loss - 3.60 10.9
Ets Total Switching Loss - 1.46 2.6 mJ k: = 5.0A
lawn) Turn-On Delay Time - 70 - TJ = 150°C, See Fig. 10,11, 18
t, Rise Time - 36 - ns k: = 8.0A, Vcc = 480V
Mott) Turn-Off Delay Time - 890 - VGE = 15V, Rs = 100n
tr Fall Time - 890 - Energy losses include "tail" and
ES Total Switching Loss - 3.83 - mJ diode reverse recovery.
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 280 - VGE = 0V
Goes Output Capacitance - 30 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 4.0 - f = 1.0MHz
trr Diode Reverse Recovery Time - 28 42 ns To = 25°C See Fig.
- 38 57 To = 125°C 14 IF =4.0A
Irr Diode Peak Reverse Recovery Current - 2.9 5.2 A To = 25°C See Fig.
- 3.7 6.7 TJ = 125°C 15 VR = 200V
er Diode Reverse Recovery Charge - 40 60 nC To = 25°C See Fig.
- 70 105 TJ = 125°C 16 di/dt = 200A/ps
di(,ec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps To = 25°C See Fig.
During tr, - 235 - To = 125°C 17
Details of note co through GD are on the last page
