IRG4BC10KD ,600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB packageFeatures High short circuit rating optimized for motor control,V = 600VCES t =10µs, @360V V (st ..
IRG4BC10SD ,600V DC-1 kHz (Standard) Copack IGBT in a TO-220AB packageFeatures• Extremely low voltage drop 1.1Vtyp. @ 2AV = 600VCES S-Series: Minimizes power dissipatio ..
IRG4BC10SD-L ,600V DC-1 kHz (Standard) Copack IGBT in a TO-262 packagePD - 94255IRG4BC10SD-SIRG4BC10SD-LINSULATED GATE BIPOLAR TRANSISTOR WITH Standard SpeedULTRAFAST SO ..
IRG4BC10SD-S ,600V DC-1 kHz (Standard) Copack IGBT in a D2-Pak packageFeaturesC• Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to ..
IRG4BC10UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageFeatures CES UltraFast: Optimized for high operating up to 80 kHz in hard switching, >200 kHz i ..
IRG4BC15UD ,600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB packageapplications• Compatible with high voltage Gate Driver IC's• Allows simpler gate driveTO-220ABAbsol ..
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IRG4BC10KD
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
PD -91734B
International
TOR Rectifier IRG4BC10KD
INSULATED GATE BIPOLAR TRANSISTOR WITH Short Circuit Rated
ULTRAFAST SOFT RECOVERY DIODE UItraFast IGBT
Features C
. High short circuit rating optimized for motor control, =
tsc =10ps, @360V VCE (start), T J = 125°C, VCES 600V
VGE = 15V
. Combines low conduction losses with high VCE(on) typ. = 2.39V
switching speed G
. Tighter parameter distribution and higher efficiency @VGE = 15V, k: = 5.0A
than previous generations E
q IGBT co-packaged with HEXFREDTM ultrafast, n-chan nel
ultrasoft recovery antiparallel diodes
Benefits
. Latest generation 4 IGBTs offer highest power density
motor controls possible
. HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
lc @ To = 25°C Continuous Collector Current 9.0
k; © To = 100°C Continuous Collector Current 5.0
ICM Pulsed Collector Current co 18 A
ILM Clamped Inductive Load Current © 18
IF © To = 100°C Diode Continuous Forward Current 4.0
IFM Diode Maximum Forward Current 16
tsc Short Circuit Withstand Time 10 us
VGE Gate-to-Emitter Voltage 1 20 V
PD @ To = 25°C Maximum Power Dissipation 38 W
Pro @ Ts = 100°C Maximum Power Dissipation 15
To Operating Junction and -55 to +150
Tsms Storage Temperature Range ''C
Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw. 1O lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - IGBT - - 3.3
Rax; Junction-to-Case - Diode - - 7.0 °C/W
Recs Case-to-Sink, flat, greased surface - 0.50 -
ReJA Junction-to-Ambient, typical socket mount - - 80
Wt Weight - 2 (0.07) - g (oz)
1
4/24/2000
International
IRG4BC10KD TOR Rectifier
Electrical Characteristics © TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)CES Collector-to-Emi) Breakdown Voltagef 600 - - V Vse = 0V, Ic = 250PA
AV(BR)CES/ATJ Temperature Coeff. of Breakdown Voltage - 0.58 - V/°C VGE = 0V, k: = 1.0mA
VCE(on) Collector-to-Emitter Saturation Voltage - 2.39 2.62 IC = 5.0A VGE = 15V
- 3.25 - V IO = 9.0A See Fig. 2, 5
- 2.63 - k: = 5.0A, TJ = 150°C
VGE(th) Gate Threshold Voltage 3.0 - 6.5 VCE = Vas lc = 250PA
AVGEUhyATJ Temperature Coeff. of Threshold Voltage - -11 - mV/°C VCE = Vas, lc = 250PA
gfe Forward Transconductance " 1.2 1.8 - S VCE = 50V, Ic = 5.0A
ICES Zero Gate Voltage Collector Current - - 250 PA l/ss = 0V, VCE = 600V
- - 1000 VGE = 0V, VCE = 600V, To = 150°C
VFM Diode Forward Voltage Drop - 1.5 1.8 V Ic = 4.0A See Fig. 13
- 1.4 1.7 k: = 4.0A, TJ = 150°C
IGES Gate-to-Emitter Leakage Current - - i100 nA Vas = A20V
Switching Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
09 Total Gate Charge (turn-on) - 19 29 IC = 5.0A
che Gate - Emitter Charge (turn-on) - 2.9 4.3 nC Vcc = 400V See Fig.8
Qgc Gate - Collector Charge (turn-on) - 9.8 15 Vas = 15V
Won) Turn-On Delay Time - 49 -
tr Rise Time - 28 - ns To = 25°C
td(oii) Turn-Ott Delay Time - 97 150 Ic = 5.0A, Vcc = 480V
tt Fall Time - 140 210 VGE = 15V, Rs = 1009
Eon Turn-On Switching Loss - 0.25 - Energy losses include "tail"
Es, Turn-Off Switching Loss - 0.14 - mJ and diode reverse recovery
Ets Total Switching Loss - 0.39 0.48 See Fig. 9,10,14
tsc Short Circuit Withstand Time 10 - - us Vcc = 360V, TJ = 125°C
VGE = 15V, Rs = 1009 , VCPK < 500V
Won) Turn-On Delay Time - 46 - To = 150°C, See Fig. 10,11,14
tr Rise Time - 32 - ns Ic = 5.0A, Vcc = 480V
tti(ott) Turn-Off Delay Time - 100 - VGE = 15V, Rs = 100n
tf Fall Time - 310 - Energy losses include "tail"
Ets Total Switching Loss - 0.56 - rm and diode reverse recovery
LE Internal Emitter Inductance - 7.5 - nH Measured 5mm from package
Cies Input Capacitance - 220 - VGE = 0V
Coes Output Capacitance - 29 - pF Vcc = 30V See Fig. 7
Cres Reverse Transfer Capacitance - 7.5 - f = 1.0MHz
trr Diode Reverse Recovery Time - 28 42 ns To = 25°C See Fig.
- 38 57 To = 125°C 14 IF = 4.0A
lrr Diode Peak Reverse Recovery Current - 2.9 5.2 A To = 25°C See Fig.
- 3.7 6.7 To = 125°C 15 Va = 200V
G, Diode Reverse Recovery Charge - 4O 60 n0 To = 25°C See Fig.
- 70 105 TJ = 125°C 16 di/dt = 200A/ps
di(rec)M/dt Diode Peak Rate of Fall of Recovery - 280 - Alps TJ = 25°C See Fig.
During tn - 235 - TJ = 125°C 17
2
