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IRFZ48Z-IRFZ48ZS
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International AUTOMOTIVE MOSFET REESE
ISER Rectifier IRFZ48ZS
Features
. Advanced Process Technology IRFZ48ZL
. Ultra Low On-Resistance HEXFET© Power MOSFET
. Dynamic dv/dt Rating D
. 175°C Operating Temperature VDSS = 55V
. Fast Switching
. Re etitive Avalanche Allowed u to Timax -
DescEiption p J G Rros(on) - 11mg
Specifically designed for Automotive applica-
tions,thisHEXFET© PowerMOSFET utilizesthe s ID = 61A
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction
operating temperature, fast switching speed and
improved repetitive avalanche rating . These
features combine to make this design an ex-
tremely efficient and reliable device for use in
Automotive applications and a wide variety of TO-220AB D2Pak TO-262
other applications. IRFZ48Z IRFZ48ZS IRFZ48ZL
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V (Silicon Limited) 61 A
ID @ Tc = 100''C Continuous Drain Current, Vss @ 10V (See Fig. 9) 43
IDM Pulsed Drain Current C) 240
P0 @Tc = 25°C Maximum Power Dissipation 91 W
Linear Derating Factor 0.61 W/°C
VGs Gate-to-Source Voltage * 20 V
EAs Single Pulse Avalanche Energy (Thermally Limited) © 73 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value © 120
IAR Avalanche Current (D See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © mJ
To Operating Junction and -55 to + 175 ''C
TSTG Storage Temperature Range
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf- in (1.1N- m)
Thermal Resistance
Parameter Typ. Max. Units
RoJc Junction-to-Case - 1.64 ''CAN
Rocs Case-to-Sink, Flat, Greased Surface 0.50 -
ROJA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state)© - 4O
HEXFET© is a registered trademark of International Rectifier.
WWW. irf.com 1
08/27/03
IRFZ48Z/S/L International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, ID = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficien - 0.054 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 8.6 11 mg VGS = 10V, ID = 37A (9
Vesmu Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250PA
gfs Forward Transconductance 24 - - S Vos = 25V, ID = 37A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 55V, VGS = 0V
- - 250 Vos = 55V, Vas = 0v, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
q, Total Gate Charge - 43 64 nC ID = 37A
As Gate-to-Source Charge - 11 16 Vos = 44V
di Gate-to-Drain ("Miller") Charge - 16 24 VGS = 10V (D
td(on) Turn-On Delay Time - 15 - ns VDD = 28V
t, Rise Time - 69 - b = 37A
td(ott) Turn-Off Delay Time - 35 - Rs = 129
tr Fall Time - 39 - N/ss = 10V (9
Lo Internal Drain Inductance - 4.5 - nH Between lead,
6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 1720 - pF Vss = OV
Coss Output Capacitance - 300 - Ws = 25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 1020 - Vss = 0V, Ws = 1.0V, f = 1.0MHz
Coss Output Capacitance - 230 - Vss = 0V, Ws = 44V, f = 1.0MHz
Coss eff. Effective Output Capacitance - 380 - VGS = 0V, Vos = 0V to 44V
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 61 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 240 integral reverse G
(Body Diode) C) p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ks = 37A, VGS = 0V GD
trr Reverse Recovery Time - 20 31 ns To = 25°C. IF = 37A, VDD = 30V
er Reverse Recovery Charge - 13 20 nC di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Cass eff. is a fixed capacitance that gives the same charging time
as Coss while Vos is rising from 0 to 80% Voss .
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
C) This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
2
OD Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
© Limited by TJmax, starting Tu = 25°C, L =0.11mH,
Rs = 259, IAS = 37A, VGS =10V. Part not
recommended tor use above this value.
© Iso 5 37A, di/dt S 920/Ups, VDD S V(BR)ross,
T J I 175°C.
© Pulse width 3 1.0ms; duty cycle S 2%.
