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IRFZ48VSPBF
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD - 95573
|RFZ48VSPbF
HEXFET® Power MOSFET
International
TOR. Rectifier
Advanced Process Technology
Ultra Low On-Resistance D
Dynamic dv/dt Rating
175°C Operating Temperature _
VDSS = 60V
Fast Switching D3: RDSW = 12mQ
Fully Avalanche Rated G
Optimized for SMPS Applications ko = 72A
Lead-Free s
Description
Advanced HEXFET® Power MOSFETs from International Rectifer
utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D2Pak is suitable for high current
applications because of its low internal connection resistance and D2Pak
can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/cs @ 10V 72
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 51 A
IDM Pulsed Drain Current (D 290
Pro @Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage i 20 V
EAs Single Pulse Avalanche Energy© 166 mJ
IAR Avalanche Current© 72 A
EAR Repetitive Avalanche Energy© 15 mJ
dv/dt Peak Diode Recovery dv/dt © 5.3 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range oc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
RQJC Junction-to-Case - 1 .0
Recs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
ReJA Junction-to-Ambient - 62
1
07/19/04
|RFZ48VSPbF
International
IEER Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGs = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient .-..-.- 0.064 -.-. V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 12.0 mg VGS = 10V, ID = 43A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Ws = VGs, ID = 250pA
grs Forward Transconductance 35 - - S Vros = 25V, ID = 43AC0
loss Drain-to-Source Leakage Current - - 25 pA VDS = 60V, VGS = 0V
- - 250 Vos = 48V, Was = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
09 Total Gate Charge - - 110 lo = 72A
095 Gate-to-Source Charge - - 29 nC VDs = 48V
di Gate-to-Drain ("Miller") Charge - - 36 VGS = 10V, See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 7.6 - VDD = 30V
tr Rise Time - 200 - ID = 72A
td(ott) Turn-Off Delay Time - 157 - ns RG = 9.1 Q
" Fall Time - 166 - Ro = 0.349, See Fig. 10 (0
LD Internal Drain Inductance - 4.5 - Between tal D
nH 6mm (0.25in.) Q: )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1985 - VGS = 0V
Coss Output Capacitance - 496 - Vos = 25V
Crss Reverse Transfer Capacitance - 91 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 72 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)® - - 290 p-n junction diode. s
VSD Diode Forward Voltage - - 2.0 V Tu = 25°C, Is = 72A, VGS = 0V 3)
trr Reverse Recovery Time - 70 100 ns Tu = 25°C, IF = 72A
Qrr Reverse Recovery Charge - 155 233 nC di/dt = 100A/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
(D Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
C) Starting To-- 25°C, L = 64pH
Rs = 259, lAs = 72A. (See Figure 12)
Tr-: 175°C
© ISD S 72A, di/dt S 151A/ps, VDD S V(BR)DSS,
GD Pulse width S 300ps; duty cycle 3 2%.
