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IRFZ48VS
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD - 94051A
RFZ48VS
International
TOR, Rectifier
HEXFET® Power MOSFET
q Advanced Process Technology D
o Ultra Low On-Resistance VDSS = 60V
q Dynamic dv/dt Rating
o 175°C Operating Temperature r A RDS(on) = 12mQ
q Fast Switching G
0 Fully Avalanche Rated ID = 72A
q Optimized for SMPS Applications s
Description
Advanced HEXFETO Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs arewell known for, providesthe designerwith an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing
surface mount package. The D2Pak is suitable for high current
applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 72
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10V 51 A
IDM Pulsed Drain Current co 290
Pro @Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 WI°C
VGS Gate-to-Source Voltage i 20 V
EAs Single Pulse Avalanche Energy© 166 mJ
IAR Avalanche Current00 72 A
EAR Repetitive Avalanche Energy© 15 mJ
dv/dt Peak Diode Recovery dv/dt © 5.3 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range 'C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .0
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RQJA Junction-to-Ambient - 62
1
5/18/01
IRFZ48VS
International
IEER Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.064 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 12.0 mn VGS = 10V, ID = 43A Cr)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V I/cos = VGs, ID = 250pA
gfs Forward Transconductance 35 - - S Ws = 25V, ID = 43A@
loss Drain-to-Source Leakage Current - - 25 pA VDS = 60V, VGS = 0V
- - 250 N/ns = 48V, VGS = 0V, TJ = 150''C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 110 lo = 72A
Q95 Gate-to-Source Charge - - 29 nC VDS = 48V
di Gate-to-Drain ("Miller") Charge - - 36 VGS = 10V, See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 7.6 - VDD = 30V
t, Rise Time - 200 - ID = 72A
tam Turn-Off Delay Time - 157 - ns Rs = 9.19
tt Fall Time - 166 - Ro = 0.349, See Fig. 10 ©
LD Internal Drain Inductance - 4.5 - Between Igad, iT, D
nH 6mm (0.25in.) AL“ l
from package G /
Ls Internal Source Inductance - 7.5 - . J
and center of die contact s
Ciss Input Capacitance - 1985 - VGs = 0V
Cogs Output Capacitance - 496 - Vos = 25V
Crss Reverse Transfer Capacitance - 91 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 72 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)© - - 290 p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V To = 25°C, Is = 72A, N/ss = 0V ©
trr Reverse Recovery Time - 70 100 ns To = 25°C, IF = 72A
Qrr Reverse Recovery Charge - 155 233 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 64pH
Rs = 259, IAS = 72A. (See Figure 12)
T J g 175°C
GD Pulse width S 300ps; duty cycle S 2%.
© ISD f 72A, di/dt s 151A/ps, VDD s V(BR)DSS,
