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IRFZ48V -IRFZ48VPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 93959A
International
TOR, Rectifier IRFZ48V
HEXFET® Power MOSFET
q Advanced Process Technology D
o Ultra Low On-Resistance VDSS = 60V
q Dynamic dv/dt Rating
o 175°C Operating Temperature r A RDS(on) = 12mQ
q Fast Switching G
0 Fully Avalanche Rated ID = 72A
q Optimized for SMPS Applications s
Description
Advanced HEXFET© Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at powerdissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 72
ID @ Tc = 100°C Continuous Drain Current, VGs @ 10V 51 A
IDM Pulsed Drain Current C) 290
PD @Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 166 mJ
IAR Avalanche Current© 72 A
EAR Repetitive Avalanche Energy© 15 mJ
dv/dt Peak Diode Recovery dv/dt © 5.3 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, tor 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .0
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RQJA Junction-to-Ambient - 62
1
3/25/01
IRFZ48V
International
IEER Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.064 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 12.0 mn VGS = 10V, ID = 43A Cr)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V I/cos = VGs, ID = 250pA
gfs Forward Transconductance 35 - - S Ws = 25V, ID = 43A@
loss Drain-to-Source Leakage Current - - 25 pA VDS = 60V, VGS = 0V
- - 250 N/ns = 48V, VGS = 0V, TJ = 150''C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 110 lo = 72A
Q95 Gate-to-Source Charge - - 29 nC VDS = 48V
di Gate-to-Drain ("Miller") Charge - - 36 VGS = 10V, See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 7.6 - VDD = 30V
t, Rise Time - 200 - ID = 72A
tam Turn-Off Delay Time - 157 - ns Rs = 9.19
tt Fall Time - 166 - Ro = 0.349, See Fig. 10 ©
LD Internal Drain Inductance - 4.5 - Between Igad, iT, D
nH 6mm (0.25in.) AL“ l
from package G /
Ls Internal Source Inductance - 7.5 - . J
and center of die contact s
Ciss Input Capacitance - 1985 - VGs = 0V
Cogs Output Capacitance - 496 - Vos = 25V
Crss Reverse Transfer Capacitance - 91 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 72 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)© - - 290 p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V To = 25°C, Is = 72A, N/ss = 0V ©
trr Reverse Recovery Time - 70 100 ns To = 25°C, IF = 72A
Qrr Reverse Recovery Charge - 155 233 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 64pH
Rs = 259, IAS = 72A. (See Figure 12)
T J g 175°C
GD Pulse width S 300ps; duty cycle S 2%.
© ISD f 72A, di/dt s 151A/ps, VDD s V(BR)DSS,
