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IRFZ48RS
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR. Rectifier
PD - 94074
IRFZ48RS
IRFZ48RL
HEXFET® Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated G
Drop in Replacement of the IRFZ48
for Linear/Audio Applications
VDSS = 60V
RDS(on) = 0.018Q
Description
Advanced HEXFETO Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible oryrestta.n.ce in ahy existing D2Pak TO-262
surface mount package. The D2Pak IS suitable for high current IRFZ48RS IRFZ44RL
applications because of its low internal connection resistance and can
dissipate up to 2.0W in a typical surface mount application.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25''C Continuous Drain Current, VGS @ 10V 50*
ID @ To = 100°C Continuous Drain Current, N/ss @ 10V 50* A
IDM Pulsed Drain Current co 290
PD @Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage i 20 V
EAs Single Pulse Avalanche Energy© 100 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.8
Recs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
RNA Junction-to-Ambient - 62
1
05/21/02
IRFZ48RS/IRFZ48RL
International
IEER Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250PA
AvungSS/ATJ Breakdown Voltage Temp. Coefrcient - 0.060 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.018 n Vcs = 10V, ID = 43A ©
VGSah) Gate Threshold Voltage 2.0 - 4.0 V I/os = VGS, ID = 250PA
gts Forward Transconductance 27 - - S Vos = 25V, ID = 43A©
loss Drain-to-Source Leakage Current - - 25 pA Vros = 60V, VGS = 0V
- - 250 Vros = 48V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/tss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - - 110 ID = 72A
095 Gate-to-Source Charge - - 29 nC Vos = 48V
di Gate-to-Drain ("Miller") Charge - - 36 V93 = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 8.1 - VDD = 30V
tr Rise Time - 250 - ID = 72A
tum) Turn-Off Delay Time - 210 - ns Rs = 9.19
tf Fall Time - 250 - Ro = 0.349, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between tad:
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package .
and center of die contact
Ciss Input Capacitance - 2400 - l/ss = 0V
Coss Output Capacitance - 1300 - Vos = 25V
Crss Reverse Transfer Capacitance - 190 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 50* MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)(0 - - 290 p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ = 25°C, Is = 72A, VGS = 0V ©
trr Reverse Recovery Time - 120 180 ns TJ = 25''C, IF = 72A
Qrr Reverse Recovery Charge - 0.50 0.80 wc di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11 )
© VDD = 25V, Starting Tu = 25°C, L = 22pH
Re = 259, IAS = 72A. (See Figure 12)
* Current limited by the package, (Die Current = 72A)
© ISD I 72A, di/dt s 200A/ps, vDD s V(BR)DSS.
T J C 175°C
© Pulse width f 300ps; duty cycle f 2%.
