IRFZ48R ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levelsto approximately 50 watts. The low thermal resistance and ..
IRFZ48RPBF , HEXFET® Power MOSFET
IRFZ48RS ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and candissipate up to 2.0W in a typ ..
IRFZ48S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V ..
IRFZ48V ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications SDescription®Advanced HEXFET Power MOSFETs from InternationalRectifier utilize advance ..
IRFZ48VPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93959AIRFZ48V®HEXFET Power MOSFETl Advanced Process TechnologyDV = 60Vl Ultra Low On-Resistanc ..
ISO122P ,Precision Lowest Cost ISOLATION AMPLIFIERMaximum Ratings(1)over operating free-air temperature range (unless otherwise noted)MIN MAX UNITSup ..
ISO122U ,Precision Lowest Cost ISOLATION AMPLIFIERSample & Support &Product Tools &TechnicalCommunityBuyFolder Documents SoftwareISO122SBOS160A–NOVEM ..
ISO124P ,Precision Lowest Cost ISOLATION AMPLIFIERMaximum Ratings.. 411.1 Layout Guidelines.... 207.2 ESD Ratings........ 411.2 Layout Example....... ..
ISO124U ,Precision Lowest Cost ISOLATION AMPLIFIERTable of Contents8.3 Feature Description...... 91
ISO-130U ,Brown Corporation - High IMR, Low Cost ISOLATION AMPLIFIER
ISO130UB ,Brown Corporation - High IMR, Low Cost ISOLATION AMPLIFIER
IRFZ48R
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 93958
IRFZ48R
HEXFET® Power MOSFET
Advanced Process Technology D
Ultra Low On-Resistance
Dynamic dv/dt Rating _
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Drop in Replacement of the IRFZ48 s
for Linear/Audio Applications
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efhcient
and reliable device for use in a wide variety of applications.
International
TOR, Rectifier
VDSS = 60V
RDS(on) = 0.018Q
ID = 50*A
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation levels
to approximately 50 watts. The low thermal resistance and TO-220AB
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 50*
ID @ Tc = 100''C Continuous Drain Current, VGS @ 10V 50* A
IDM Pulsed Drain Current OD 290
Pro @Tc = 25°C Power Dissipation 190 W
Linear Derating Factor 1.3 W/''C
VGS Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy© 100 m]
IAR Avalanche CurrentCD 50 A
EAR Repetitive Avalanche EnergyC) 19 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 0.8
Recs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
RNA Junction-to-Ambient - 62
IRFZ48R
International
IEBR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250PA
AvungSS/ATJ Breakdown Voltage Temp. Coemcient - 0.060 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.018 n Vcs = 10V, ID = 43A ©
VGSah) Gate Threshold Voltage 2.0 - 4.0 V I/os = VGS, ID = 250PA
gts Forward Transconductance 27 - - S Vos = 25V, ID = 43A©
loss Drain-to-Source Leakage Current - - 25 pA Vros = 60V, VGS = 0V
- - 250 Vros = 48V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/tss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - - 110 ID = 72A
095 Gate-to-Source Charge - - 29 no Vos = 48V
di Gate-to-Drain ("Miller") Charge - - 36 V93 = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 8.1 - VDD = 30V
tr Rise Time - 250 - ID = 72A
tum) Turn-Off Delay Time - 210 - ns Rs = 9.19
tf Fall Time - 250 - Ro = 0.349, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between tad: _ D
nH 6mm (0.25in.) L )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 2400 - l/ss = 0V
Coss Output Capacitance - 1300 - Vos = 25V
Crss Reverse Transfer Capacitance - 190 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 50* MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)(0 - - 290 p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ = 25°C, Is = 72A, VGS = 0V ©
trr Reverse Recovery Time - 120 180 ns TJ = 25''C, IF = 72A
Qrr Reverse Recovery Charge - 0.50 0.80 wc di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11 )
© VDD = 25V, Starting Tu = 25°C, L = 22pH
Re = 259, IAS = 72A. (See Figure 12)
* Current limited by the package, (Die Current = 72A)
© ISD I 72A, di/dt s 200A/ps, vDD s V(BR)DSS.
T J C 175°C
© Pulse width f 300ps; duty cycle f 2%.
