IRFZ48NSTRRPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFZ48R ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levelsto approximately 50 watts. The low thermal resistance and ..
IRFZ48RPBF , HEXFET® Power MOSFET
IRFZ48RS ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internal connection resistance and candissipate up to 2.0W in a typ ..
IRFZ48S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V ..
IRFZ48V ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplications SDescription®Advanced HEXFET Power MOSFETs from InternationalRectifier utilize advance ..
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ISO124P ,Precision Lowest Cost ISOLATION AMPLIFIERMaximum Ratings.. 411.1 Layout Guidelines.... 207.2 ESD Ratings........ 411.2 Layout Example....... ..
ISO124U ,Precision Lowest Cost ISOLATION AMPLIFIERTable of Contents8.3 Feature Description...... 91
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IRFZ48NSTRRPBF
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International PD-95125
TOR Rectifier IRFZ48NSPbF
Advanced Process Technology I R FZ4 8 N L P b F
o Surface Mount(IRFZ48NS) HEXFET© Power MOSFET
o Low-profilethrough-hole(lRFZ48NL)
0 175°C OperatingTemperature D V - 55V
0 Fast Switching DSS -
0 Fully Avalanche Rated
0 Lead-Free . A RDS(on) = 0.014Q
Description G
Advanced HEXFET© Power MOSFETs from
International Rectifier utilize advanced processing ID = 64A
techniques to achieve extremely low on-resistance s
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is 2
suitable for high current applications because of its low D Pak TO-262
internal connection resistance and can dissipate up to 2.0W
in atypical surface mountapplication.
The through-hole version (IRFZ48NL) is availablefor low-
profileapplications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ To = 100°C Continuous Drain Current, VGS @ 10V 45 A
IDM Pulsed Drain Current co 210
PD @TA = 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 130 W
Linear Derating Factor 0.83 W/°C
VGS Gate-to-Source Voltage t 20 V
IAR Avalanche CurrentCD 32 A
EAR Repetitive Avalanche Energy® 13 mJ
dv/dt Peak Diode Recovery dv/dt G) 5.0 V/ns
T, Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rch Junction-to-Case - 1.15 "C/W
RqJA Junction-to-Ambient ( PCB Mounted,steady-state)** - 4O
1
3/18/04
IRFZ48NS/LPbF
International
TOR Rectifier
Electrical Characteristics @ T, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmpss Drain-to-Source Breakdown Voltage 55 - - V Vas = 0V, lo = 250pA
AmeDss/ATJ Breakdown Voltage Temp. Coefficient - O.058 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 14 mn Vss = 10V, ID = 32A (9
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gfs Forward Transconductance 24 - - S Vos = 25V, ID = 32A©
loss Drain-to-Source Leakage Current - - 25 PA Vros = 55V, VGS = 0V
- - 250 Vos = 44V, Vas = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
ch Total Gate Charge - -- 81 ID = 32A
Qgs Gate-to-Source Charge - - 19 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 30 Vss = 10V, See Fig. 6 and 13
Won) Turn-On Delay Time - 12 - VDD = 28V
t, Rise Time - 78 - ID = 32A
tdm Turn-Off Delay Time - 34 - ns Rs = 0.859
tf Fall Time - 50 - VGS =1OV, See Fig. 10 (4)
LS Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 1970 - VGS = 0V
Coss Output Capacitance - 470 - Vos = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 700© 190© mJ lAs = 32A, L = 0.37mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 64 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)(D - - 210 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 32A, Vai; = 0V ©
tr, Reverse Recovery Time - 68 100 ns Tu = 25°C, IF = 32A
Qrr Reverse Recovery Charge - 220 330 no di/dt = 100A/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L = 0.37mH
Rs = 259,
IAS; = 32A. (See Figure 12)
© ISD S 32A, di/dt S 220A/ps, VDD S V(BR)DSS=
Tu 3 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
© Pulse width 5 400ps; duty cycle S 2%.
s This is the destructive value not limited to the thermal limit.
© This is the thermal limited value.
