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IRFZ48NS-IRFZ48NSPBF-IRFZ48NSTRL
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
PD - 9.1408B
TOR Rectifier
. Advanced Process Technology R F248 N L
. Surface Mount (IRFZ48NS) HEXFET6 Power MOSFET
o Low-profile through-hole (IRFZ48NL) D
. 175°C Operating Temperature VDSS = 55V
0 Fast Switching
. Fully Avalanche Rated FN, RDSM) = 0.0149
Description
Advanced HEXFET© Power MOSFETs from I - 64A
International Rectifier utilize advanced processing D -
techniques to achieve extremely low on-resistance s
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highestpowercapabilityandthelowestpossibleon-resistance
in any existing surface mount package. The D2Pak is 2
suitable for high current applications because of its low D Pak T0-262
internal connection resistance and can dissipate up to 2.0W
inatypicalsurface mountapplication.
Thethrough-hole version (IRFZ48NL) is available for low-
profeapplications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V 64
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 45 A
IDM Pulsed Drain Current co 210
Pro @TA = 25°C Power Dissipation 3.8 W
Pro @Tc = 25°C Power Dissipation 130 W
Linear Derating Factor 0.83 W/''C
VGS Gate-to-Source Voltage , 20 V
IAR Avalanche CurrentC) 32 A
EAR Repetitive Avalanche EnergyC) 13 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T, Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rch Junction-to-Case - 1.15 °C/W
RqJA Junction-to-Ambient ( PCB Mounted,steady-state)" - 40
1
03/12/01
IRFZ48NS/IRFZ48NL International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bmoss Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, lo = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.058 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 14 mn VGS = 10V, ID = 32A ©
VGS(m) Gate Threshold Voltage 2.0 - 4.0 V Vros = Vss, ID = 250PA
gfs Forward Transconductance 24 - - S Vos = 25V, ID = 32A@
loss Drain-to-Source Leakage Current - - 25 pA Vos = 55V, VGS = 0V
- - 250 Vos = 44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -100 N/ss = -20V
Qg Total Gate Charge - - 81 ID = 32A
Qgs Gate-to-Source Charge - - 19 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 30 Ffas = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 78 - ns ID = 32A
tum) Turn-Off Delay Time - 34 - Rs = 0.859
tr Fall Time - 50 - VGs = 10V, See Fig. 10 ©
Ls Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 1970 - VGs = 0V
Coss Output Capacitance - 470 - Vos = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz, See Fig. 5
EAs Single Pulse Avalanche Energy© - 7006) 190© mJ lAs = 32A, L = 0.37mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 64 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)® - - 210 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 32A, Veg = 0V CO
tn Reverse Recovery Time - 68 100 ns T: = 25°C, IF = 32A
er Reverse Recovery Charge - 220 330 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+Lo)
Notes:
co Repetitive rating; pulse width limited by © Pulse width 3 400ps; duty cycle LC 2%.
max. junction temperature. ( See fig. 11 ) © This is the destructive value not limited to the thermal limit.
© Starting TJ = 25°C, L = 0.37mH © This is the thermal limited value.
Rs = 259, 1A3 = 32A. (See Figure 12)
© la, f 32A, di/dt s 220A/ps, V00 s: V(BR)oss,
T J LC 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
2
