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IRFZ48N-IRFZ48NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR Rectifier
PD - 91406
IRFZ48N
HEXFET© Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
VDSS = 55V
A RDS(on) = 14mQ
ID = 64A
Advanced HEXFETO Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in awide variety ofapplications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, Vss @ 10V 64
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 45 A
IDM Pulsed Drain Current co 210
Pro @Tc = 25°C Power Dissipation 130 W
Linear Derating Factor 0.83 Wl°C
VGS Gate-to-Source Voltage , 20 V
IAR Avalanche Current0) 32 A
EAR Repetitive Avalanche Energy© 13 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (IAN-m)
Thermal Resistance
Parameter Typ. Max. Units
Rsoc Junction-to-Case - 1.15
R903 Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
ReJA Junction-to-Ambient - 62
1
1/3/01
IRFZ48N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V l/cs = 0V, ID = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.058 - V/°C Reference to 25''C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 14 mn l/ss = 10V, ID = 32A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250pA
gts Forward Transconductance 24 - - S VDS = 25V, ID = 32A@
loss Drain-to-Source Leakage Current - - 25 pA VDS = 55V, VGS = 0V
- - 250 VDS = 44V, VGs = ov, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 81 ID = 32A
095 Gate-to-Source Charge - - 19 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 30 I/ss = 10V, See Fig. 6 and 13
Kon) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 78 - ns lo = 32A
tam) Turn-Off Delay Time - 34 - Rs = 0.859
tf Fall Time - 50 - VGS = 10V, See Fig. 10 ©
LD Internal Drain Inductance - 4.5 - Between tal D
nH 6mm (0.25m) E )
from package G
Ls Internal Source Inductance - 7.5 - . -
and center of die contact s
Ciss Input Capacitance - 1970 - Ves = 0V
Coss Output Capacitance - 470 - Vros = 25V
Crss Reverse Transfer Capacitance - 120 - pF f = 1.0MHz, See Fig. 5
EAs Single Pulse Avalanche Energy© - 700S 190© mJ IAS = 32A, L = 0.37mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 64 MOSFET symbol D
(Body Diode) A showing the
IsM Pulsed Source Current - - 210 integral reverse G
(Body Diode)® p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 32A, l/ss = 0V ©
trr Reverse Recovery Time - 68 100 ns To = 25°C, IF = 32A
G, Reverse Recovery Charge - 220 330 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting To = 25''C, L = 0.37mH
R3 = 259, bus-- 32A. (See Figure 12)
© Iso s: 32A, di/dt s 220A/ps, VDD s: V(BR)ross,
T J 3 175°C
© Pulse width 3 400ps; duty cycle I 2%.
S This is the destructive value not limited to the thermal limit.
© This is the thermal limited value.
