IRFZ48 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
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IRFZ48N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
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IRFZ48NSPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFZ48NSTRL ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 9.1408BIRFZ48NSIRFZ48NL Advanced Process Technology®HEXFET Power MOSFET Surface Mount (IRFZ4 ..
ISO122JU ,Precision Lowest Cost ISOLATION AMPLIFIERTable of Contents8.3 Feature Description...... 81
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ISO124U ,Precision Lowest Cost ISOLATION AMPLIFIERTable of Contents8.3 Feature Description...... 91
IRFZ48
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
E5131 Rectifier
HEXFET® Power MOSFET
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Ultra-Low On-Resistance
Very Low Thermal Resistance
175°C Operating Temperature
Fast Switching
Ease of Paralleling
PD-9.758
I R FZ48
D Voss = 60V
" RDS(on) = 0.0189
S ID = 50*A
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-i/IB
Jilliifi
Parameter H W Max. f NH“ Units
10 © Tc = 25°C Continuous Drain Current, Vas © 10 V 50*
lo © Tc = 100°C Continuous Drain Current, I/ss @ 10 V - _.__5.p_*, ddddddddd A
[W Pulsed Drain Current (D 290
Po © Tc = 25°C Power Dissipation _~__ d _lf_tl - -- W
Linear Derating Factor 1.3 W/“C
Vss Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy © ___)’M_) Jl#.gy_w 52L-
IAR Avalanche Current C) 50 j- A
EAR Repetitive Avalanche Energy Ci) 19 ml
dv/dt ; Peak Diode Recovery dv/dt © - 4.5 - - _____V/ns
TJ l Operating Junction and -55 to +175
TSTG Storage Temperature Range - - °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ.__ _Mg_)£ - _glits_
Reuc Junction-to-Case - - 0.80
Recs Case-to-Sink, Flat, Greased Surface - _.l_p.._sjp_,____._-_, °C/W
Rasa Junction-to-Ambient - 1 - 62
IRFZ48
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(enmss Drain-to-Source Breakdown Voltage 60 - - V Vss=OV, ID: 25thtA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient -.... 0.060 - VPC Reference to 25°C. In: 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.018 Q Ves=10V, ID=43A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs=VGs, lo: 250pA
gis Forward Transconductance 27 - - S Vos=25V, lo=43A 8)
loss Drain-to-Source Leakage Current - - 25 pA 1/ros---60V, Var-OV
1 - - 250 VDs=48V, 1/tss=0V, TJ=150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss=20V
Gate-to-Source Reverse Leakage - - -100 VGs=-20V
Q, Total Gate Charge - - 110 |o=72A
Qgs Gate-to-Source Charge - - 29 nC Vos=48V
di Gate-to-Drain ("Miller") Charge - - 36 Ves=10V See Fig. 6 and 13 ©
tum Turn-On Delay Time - 8.1 - VDD=30V
tr Rise Time - 250 - ns ID=72A
tam) Turn-Off Delay Time - 210 - Fle=9.1Q
t, Fall Time - 250 - RD=0.34Q See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - ttitltt"('illti1/i'.') D
nH from package egg)
Ls Internal Source Inductance - 7.5 - and center df
die contact s
Cass Input Capacitance - 2400 - Vas=OV
Coss Output Capacitance - 1300 - pF VDs=25V
Crss Reverse Transfer Capacitance - 190 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
is Continuous Source Current - L... 50* MOSFET symbol 0
(Body Diode) A showing the L-,-i)
ISM Pulsed Source Current - - 290 integral reverse G (trl
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - 2.0 V TJ=25°C, ls=72A, Vas=OV g
tn I Reverse Recovery Time - 120 180 ns TJ=25°C, |F=72A
er Reverse Recovery Charge - 0.50 0.80 wc di/dt=100A/us ©
ton Forward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+luo)
Notes:
03 Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© Voo=25V, starting TJ=25°C, L=22uH
RG=259, lAs=72A (See Figure 12)
* Current limited by the package, (Die Current =72A)
TJS175°C
O) ISDS72A, di/dts200A/us, VDDSV(BR)oss,
© Pulse width 5 300 us; duty cycle S2°/o.
