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IRFZ46S from IR,International Rectifier

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IRFZ46S

Manufacturer: IR

50V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

Partnumber Manufacturer Quantity Availability
IRFZ46S IR 18 In Stock

Description and Introduction

50V Single N-Channel HEXFET Power MOSFET in a D2-Pak package The IRFZ46S is a power MOSFET manufactured by International Rectifier (IR). Below are the key specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Manufacturer:**  
- **International Rectifier (IR)**  

### **Specifications:**  
- **Drain-Source Voltage (VDSS):** 55V  
- **Continuous Drain Current (ID):** 53A (at 25°C)  
- **Pulsed Drain Current (IDM):** 160A  
- **Gate-Source Voltage (VGS):** ±20V  
- **Power Dissipation (PD):** 94W (at 25°C)  
- **On-Resistance (RDS(on)):** 0.024Ω (max at VGS = 10V, ID = 26A)  
- **Threshold Voltage (VGS(th)):** 2V to 4V  
- **Input Capacitance (Ciss):** 2700pF (typical)  
- **Output Capacitance (Coss):** 700pF (typical)  
- **Reverse Transfer Capacitance (Crss):** 150pF (typical)  
- **Turn-On Delay Time (td(on)):** 13ns (typical)  
- **Turn-Off Delay Time (td(off)):** 44ns (typical)  
- **Operating Temperature Range:** -55°C to +175°C  

### **Description:**  
- The IRFZ46S is an N-channel power MOSFET designed for high-current, high-speed switching applications.  
- It features low on-resistance and fast switching characteristics, making it suitable for power management in DC-DC converters, motor control, and other high-efficiency applications.  

### **Features:**  
- **Advanced HEXFET® Technology** for low conduction losses.  
- **Low On-Resistance (RDS(on))** for improved efficiency.  
- **Fast Switching Speed** for high-frequency applications.  
- **Avalanche Energy Rated** for ruggedness in harsh conditions.  
- **Fully Characterized for Dynamic Performance** to ensure reliable operation.  
- **Lead-Free & RoHS Compliant** for environmental safety.  

The IRFZ46S is commonly used in power supplies, motor drives, and automotive applications.

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