IRFZ46NL ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
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IRFZ46NL
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
PD - 91305C
TOR Recil ti er
a Advanced Process Technology HEXFET© Power MOSFET
. SurfaceMount(lRFZ46NS)
o Low-profile through-hole (IRFZ46NL) D VDSS = 55V
0 175°C Operating Temperature
q Fast Switching R - 0 0165Q
. Fully Avalanche Rated G FN, DS(on) .
Description I = 53/W)
Advanced H EXFETO Power MOSFETs from International D
Rectifier utilize advanced processing techniques to achieve s
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of /ltir F .
accommodating die sizes upto HEX-4. It provides the highest '
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable D2 Pak TO-262
for high current applications because of its low internal
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ46N L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, VGS @ 10V© 53
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10V© 37 A
IDM Pulsed Drain Current (DC 180
PD ttr,, = 25°C Power Dissipation 3.8 W
PD ttTc = 25°C Power Dissipation 107 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage , 20 V
IAR Avalanche Current© 28 A
EAR Repetitive Avalanche EnergyCD 11 mJ
dv/dt Peak Diode Recovery dv/dt ©S 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rsuc Junction-to-Case - 1 .4 "CA/V
Rem Junction-to-Ambient ( PCB Mounted/steady-state)" - 40
1
04/08/04
International
IRFZ46NS/IRFZ46NL
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coefficient - 0.057 - V/°C Reference to 25°C, ID =1mA©
Roam) Static Drain-to-Source On-Resistance - - .0165 Q Vss =10V, ID = 28A G)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vros = VGS. ID = 250pA
gfs Forward Transconductance 19 - - S VDS = 25V, ID = 28ADS
bss Drain-to-Source Leakage Current - - 25 pA Vos = 55V, VGS = 0V
- - 250 I/rs = 44V, l/ss = 0V, TJ = 150°C
I Gate-to-Source Forward Leakage --- - 100 A VGs = 20V
GSS Gate-to-Source Reverse Leakage - - -100 n Vss = -20V
09 Total Gate Charge - - 72 ID = 28A
Qgs Gate-to-Source Charge - - 11 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 26 VGs = 10V, See Fig. 6 and 13 cos
td(0n) Turn-On Delay Time - 14 - VDD = 28V
tr Rise Time - 76 - ID = 28A
tum) Turn-Off Delay Time - 52 - ns Rs = 12n
tf FaIITime - 57 - RD = 0.989, See Fig. 10®©
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1696 - Ves = 0V
Coss Output Capacitance - 407 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz, See Fig. "
EAs Single Pulse Avalanche Energy © - 583@152© IAS-- 28A, L = 389mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFETsymbol D
(Body Diode) - - 53 A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode) (D - - 180 p-n junction diode. s
l/sn Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 28A, VGS = 0V 6)
trr Reverse Recovery Time - 67 101 ns Tu = 25°C, IF = 28A
Qrr Reverse Recovery Charge - 208 312 nC di/dt = 100A/ps (90)
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 389pH
Rs = 259, IAS = 28A. (See Figure 12)
© Iso S 28A, di/dt S 220/Ups, VDDS V(BR)oss,
TJS 175°C.
60 Pulse width f 400ps; duty cycle S 2%.
S Uses IRFZ46N data and test conditions.
© This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to TJ = 175°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
