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IRFZ46N-IRFZ46NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:raRIectifier
PD-91277A
IRFZ46N
HEXFET© Power MOSFET
o Advanced Process Technology D
q Ultra Low On-Resistance VDSS = 55V
. Dynamic dv/dt Rating
q 175°C Operating Temperature A RDS(on) = 16.5mQ
0 Fast Switching
q Fully Avalanche Rated ID = 53A®
Description
Advanced HEXFETO Power MOSFETs from International
Rectiher utilize advanced processing techniques to achieve
extremely low on-resistance persilicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in awide variety ofapplications.
The TO-220 package is universally preferred for all
commerciaI-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute TO-220AB
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53©
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A
IDM Pulsed Drain Current co 180
Pro @Tc = 25°C PowerDissipation 107 W
Linear Derating Factor 0.71 Wl°C
VGS Gate-to-Source Voltage 1 20 V
IAR Avalanche Current© 28 A
EAR Repetitive Avalanche Energy© 11 mJ
dv/dt Peak Diode Recovery dv/dt G) 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1 Atom)
Thermal Resistance
Parameter Typ. Max. Units
Rea: Junction-to-Case - 1.4
Racs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
ReJA Junction-to-Ambient - 62
1
07/15/02
IRFZ46N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/AT_| Breakdown Voltage Temp. Coemcient - 0.057 - V/''C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 16.5 mn VGS = 10V, ID = 28A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS = Vss, ID = 250PA
git Forward Transconductance 19 - - S Vos = 25V, ID = 28ACO
loss Drain-to-Source Leakage Current - - 25 pA Vos = 55V, VGS = 0V
- - 250 VDs = 44V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 72 ID = 28A
095 Gate-to-Source Charge - - 11 nC VDS = 44V
di Gate-to-Drain/Miller") Charge - - 26 V95 = 10V, See Fig. 6 and 13
tum) Turn-On Delay Time - 14 - VDD = 28V
tr Rise Time - 76 - ns ID = 28A
tam“) Turn-Off Delay Time - 52 - Rs = 12n
t, FallTime - 57 - VGS = 10V, See Fig. 10 (9
. Between lead, D
u, Internal Drain Inductance - 4.5 - .
nH 6mm (0.25m) JC )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss InputCapacitance - 1696 - l/ss = 0V
Cass OutputCapacitance - 407 - I/rss = 25V
Crss Reverse TransferCapacitance - 110 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 583S 152© mJ IAS = 28A, L = 389WH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 53 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)C) - - 180 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V To = 25°C, ls = 28A, Vss = 0V ©
trr Reverse Recovery Time - 67 101 ns TJ = 25°C, IF = 28A
G, Reverse Recovery Charge - 208 312 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L5+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ).
C) Starting To = 25°C, L = 389pH
Rs = 259, IAS = 28A. (See Figure 12).
© '30 s: 28A, di/dt s: 220A/ps, VDD s V(BR)DSS!
To s175°C.
© Pulse width 3 400ps; duty cycle f 2%.
© This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C.
© Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 39A.
