IRFZ46.. ,50V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
1:212 Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Rating
. 175°C Operati ..
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IRFZ46-IRFZ46..
50V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-9.827
hmtternatiiortall
7(i'R Rectifier ' IRFZ46
HEXFET® Power MOSFET
er Dynamic dv/dt Rating
175°C Operating Temperature D -
Fast Switching VDSS - 50V
Ease of Paralleling
Simple Drive Requirements
RDS(OH) = 0.0249
s ID = 50*A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO.aO package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0420 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc IT. 2500 Continuous Drain Current, N/ss © 10 V 50*
ID @ To = 100°C Continuous Drain Current, Ves @ 10 V 38 A
IDM Pulsed Drain Current Ci) 220
Po @ Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 WPC
Vas Gate-to-Source Voltage k20 V
EAS _ Single Pulse Avalanche Energy © 100 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
Tu Operating Junction and -55 to +175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 lbf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rate Junction-to-Case - - 1.0
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Ra), Junction-to-Ambient -.r. - 62
IRFZ46 EOR
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
V(BH)Dss Drain-to-Source Breakdown Voltage 50 - - V VGs=0V, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.057 - V/°C Reference to 25°C, In: 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.024 Q VGs=10V, |D=32A G)
. Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS=VGs, ID-- 250pA
i' gfs Forward Transconductance 27 ') - -... S VDs=25V, lo=32A (if)
loss Drain-to-Source Leakage Current . - : -... 25 pA VDS=50V’ I/as-MN
r' 3 - - 250 VDs=48V, Ves=OV, TJ=150°C
less Gate-to-Source Forward Leakage i - - 100 n A VGs=20V
Gate-to-Source Reverse Leakage - - -100 Vss---201/
q, Total Gate Charge - - 66 |o=54A
Qgs Gate-to-Source Charge - -- 21 nC VDs=48V
di Gate-to-Drain ("Miller") Charge - - 25 VGS=10V See Fig. 6 and 13 Cs)
tam) Turn-On Delay Time - 12 - VDD=28V
tr Rise Time - 120 - ns b--54A
tam) Turn-Off Delay Time - 42 - Re=9.1Q
tf Fall Time - 95 - RD--0.49n See Figure 10 ©
LD Internal Drain Inductance - 4.5 - te,t,vdrl1.ltie')
nH from package G
Ls internal Source Inductance - 7.5 - Ind center 6f
die contact
Ciss Input Capacitance - 1800 - Vair=0V
Coss Output Capacitance - 960 - pF Vos-=-25V
Crss Reverse Transfer Capacitance - 160 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min, Typ. Max. Units i Test Conditions
Is Continuous Source Current _ - 50* MOSFET symbol D
(Body Diode) A showing the F7:
_ ISM Pulsed Source Current - - 220 integral reversg G :L
(Body Diode) C) p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=25°C, ls=54A, Ves=0V ©
trr Reverse Recovery Time - 66 99 ns TJ=25°C, IF=54A
Orr Reverse Recovery Charge - 0.17 0.31 wc di/dt---100A/I1s co ,
ton FOrwardTurn-OnTime 'ntrinsicturn-ontimeisneoegitge(turn-onisdominatedtoyLs+Uo)l
Notes:
C) Repetitive rating; pulse width limited by G) ISDSS4A, di/dts250A/us, Voosvmmoss,
max. junction temperature (See Figure 11) TJS175°C
Q) Voo=25V, starting TJ=25°C, L=34uH (ii) Pulse width S 300 us; duty cycle 32%.
R622SQ, iAs=54A (See Figure 12)
* Current limited by the package, (Die Current =54A)
