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IRFZ44ZS
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94797
International
. . llRFZ44Z
ttti AUTOMOTIVE MOSFET
Tart, Rectifier IRFZ44ZS
Features I Fl FZ44ZL
Advanced Process Technology
Ultra Low On-Resistance HEXFET% Power MOSFET
Dynamic dv/dt Rating
175°C Operating Temperature D -
Fast Switching VDSS - 55V
Repetitive Avalanche Allowed up to Tmax
RDS(on) = 13.9mQ
Description
Specifically designed for Automotive applica- s ID = 51A
tions,thisHEXFET® PowerMOSFET utilizesthe
latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional
features of this design are a 175°C junction ,.
operatingtemperature,fastswitching speed and tr 'git: £3 :giit,
improved repetitive avalanche rating . These Nt"i((c" x. _'it.ii:Ir,ri,i Riis' .
features combine to make this design an ex- N .- l l, '
tremely efficient and reliable device for use in
Automotive applications and a wide variety of
. . TO-220AB D2Pak TO-262
otherapplications. IRFZ44Z IRFZ44ZS IRFZ44ZL
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Ves @ 10V (Silicon Limited) 51 A
In @ To = 100°C Continuous Drain Current, Vas @ 10V (See Fig. 9) 36
IBM Pulsed Drain Current (D 200
Pro @Tc = 25°C Maximum Power Dissipation 80 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy (Thermally Limited) © 86 mJ
EAS (tested) Single Pulse Avalanche Energy Tested Value © 105
'AR Avalanche Current Co See Fig.12a,12b,15,16 A
EAR Repetitive Avalanche Energy © mJ
TJ Operating Junction and -55 to + 175 °C
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1 .6mm from case )
Mounting torque, 6-32 or M3 screw 10 |bfoin (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
Rom Junction-to-Case - 1.87 °CNV
Recs Case-to-Sink, Flat, Greased Surface 0.50 --
ROJA Junction-to-Ambient - 62
ROJA Junction-to-Ambient (PCB Mount, steady state)© - 40
HEXFET6 is a registered trademark of International Rectifier.
1
10/8/03
IRFZ44Z/S/ L
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V l/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficien - 0.054 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11.1 13.9 mg Vss = 10V, ID = 31 A (D
VGS(lh) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vss, ID = 250pA
gfs Forward Transconductance 22 - - S Vos = 25V, ID = 31A
loss Drain-to-Source Leakage Current - -- 2O pA Vos = 55V, Vss = 0V
-- -- 250 Vos = 55V, Vss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage -- -- 200 nA Vss = 20V
Gate-to-Source Reverse Leakage -- -- -200 Vss = -20V
q, Total Gate Charge - 29 43 nC ID = 31A
Qgs Gate-to-Source Charge - 7.2 11 Vos = 44V
di Gate-to-Drain ("Miller") Charge - 12 18 Vss = 10V ©
td(on) Turn-On Delay Time - 14 - ns VDD = 28V
t, Rise Time - 68 - ID = 31A
tam") Turn-Off Delay Time - 33 - Rs = 159
it Fall Time - 41 - Vss = 10V C)
LD Internal Drain Inductance - 4.5 - nH Between lead,
6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package G
and center of die contact
Ciss Input Capacitance - 1420 - pF Vas = 0V
Coss Output Capacitance - 240 - Vos = 25V
Crss Reverse Transfer Capacitance - 130 - f = 1.0MHz, See Fig. 5
Coss Output Capacitance - 830 - Vas = 0V, Vros = 1.0V, f = 1.0MHz
Cass Output Capacitance - 190 - Vas = ov, Vros = 44V, f = 1.0MHz
Cass eff. Effective Output Capacitance - 300 - Vas = 0V, Vos = 0V to 44V
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current -- -- 51 MOSFET symbol
(Body Diode) A showing the D
ISM Pulsed Source Current - - 200 integral reverse _
(Body Diode) C) p-n junction diode. t" l M ar
l/so Diode Forward Voltage - - 1.2 v TJ = 25°C, Is = 31A, VGSW
trr Reverse Recovery Time - 23 35 ns TJ = 25°C, IF = 31A, VDD = 28V
Q,, Reverse Recovery Charge - 17 26 nC di/dt = 100A/ps C9
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
co Limited by TJmax, starting Tu = 25°C, L =O.18mH,
Rs = 259, IAS = 31A, Vss =1OV. Part not
recommended for use above this value.
co Iso I 31A, di/dt S 840A/ps, VDD S V(BR)Dss,
Tu : 175°C.
© Pulse width 3 1.0ms; duty cycle 5 2%.
(9 Coss eff. is a fixed capacitance that gives the same charging time
as CUSS while VDS is rising from Oto 80% Voss .
© Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
© This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D2Pak, when mounted on 1" square PCB
( FR-4 or G-1O Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
© Ro is rated at Tu of approximately 90°C.
