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IRFZ44VZL-IRFZ44VZS
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
. I PD - 94755
Internati(ona
.3 R ti fi AUTOMOTIVE MOSFET IRFZ44VZ
TOR SC I Ier IRFZ44VZS
IRFZ44VZL
Features HEXFET© Power MOSFET
. Advanced Process Technology
o Ultra Low On-Resistance D
q 175°C Operating Temperature VDSS = 60V
. Fast Switching
o Repetitive Avalanche Allowed up to Tjmax r, RDS(on) = 12mg
Description
Specifically designed for Automotive applications, s ID = 57A
this HEXFET© Power MOSFET utilizes the latest
processing techniques to achieve extremelylowon-
resistance per silicon area. Additional features of
this design area175°Cjunctionoperatingtempera- .1 (ijt) 4i,tt
ture, fast switching speed and improved repetitive "i5il'r' h, * ,
avalanche rating . These features combine to make ’\. '.'
this design an extremely efficient and reliable device .
for use in Automotive applications and a wide variety TO-220AB D2Pak TO 262
of other applications. IRFZ44VZ IRFZ44VZS IRFZ44VZL
Absolute Maximum Ratings
Parameter Max. Units
lo @ TC = 25°C Continuous Drain Current, Vss @ 10V (Silicon Limited) 57
ID @ TC = 100''C Continuous Drain Current, Vss @ 10V 40 A
IDM Pulsed Dram Current co 230
PD @TC = 25°C Power Dissipation 92 W
Linear Derating Factor 0.61 W/''C
VGS Gate-to-Source Voltage i 20 V
EAS (Thermallylimiled) Single Pulse Avalanche Energy© 73 m J
EAS (Tested )
Single Pulse Avalanche Energy Tested Value ©
Avalanche Current oo
IAR See Fig.12a,12b,15,16 A
EAR Repetltlve Avalanche Energy S mJ
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw © 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.64 ''C/W
Recs Case-to-Sink, Flat Greased Surface (D 0.50 -
ROJA Junction-to-Ambient © - 62
ROJA Junction-to-Ambient (PCB Mount) - 40
1
8/25/03
|RFZ44VZS_L
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.061 - V/°C Reference to 25°C, b = 1mA
RDS(on) Static Drain-to-Source On-Resistance .- 9.6 12 m9 l/GS = 10V, ID = 34A ©
Vesun) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
gts Forward Transconductance 25 - - V Vros = 25V, ID = 34A
loss Drain-to-Source Leakage Current - - 20 pA Vos = 60V, VGS = 0V
- - 250 Vos = 60V, I/ss = 0V, TJ = 125°C
less Gate-to-Source Forward Leakage - - 200 nA VGS = 20V
Gate-to-Source Reverse Leakage - - -200 VGS = -20V
Qg Total Gate Charge - 43 65 ID = 34A
Qgs Gate-to-Source Charge - 11 - nC Vos = 48V
di Gate-to-Drain ("Miller") Charge - 18 - VGS = 10V ©
tum) Turn-On Delay Time - 14 - VDD = 30V
t, Rise Time - 62 - ID = 34A
td(off) Turn-Off Delay Time - 35 - ns Rs = 12 Q
fr Fall Time - 38 - VGS = 10V ©
LD Internal Drain Inductance - 4.5 - Between lead,
nH 6mm (0.25in.)
Ls Internal Source Inductance - 7.5 - from package
and center of die contact
Ciss Input Capacitance - 1690 - Vss = 0V
Cass Output Capacitance - 270 - Vos = 25V
Crss Reverse Transfer Capacitance - 130 - pF f = 1.0MHz
Coss Output Capacitance - 1870 - Vss = 0V, Vos = 1.OV, f = 1.0MHz
Cass Output Capacitance - 260 - Vss = 0V, Vros = 48V, f = 1.0MHz
cuss eff. Effective Output Capacitance - 510 - VGS = 0V, Vos = 0V to 48V ©
Source-Drain Ratings and Characteristics
Parameter Min Typ. Max. Units Conditions
IS Continuous Source Current - - 57 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 230 integral reverse a
(Body Diode) co p-n junction diode. q
VSD Diode Forward Voltage - - 1.3 V TJ = 25''C, ls = 34A, VGs = 0V ©
trr Reverse Recovery Time - 23 35 ns T J = 25°C, IF = 34A, VDD = 30V
Qrr Reverse Recovery Charge - 17 26 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
