IRFZ44VS ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFZ44VZL ,60V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.IRFZ44VZIRFZ44VZS IRFZ44VZLAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Co ..
IRFZ44VZS ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageFeatures®HEXFET Power MOSFET● Advanced Process TechnologyD● Ultra Low On-ResistanceV = 60V● 175°C O ..
IRFZ44ZS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.IRFZ44ZIRFZ44ZS IRFZ44ZLAbsolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Conti ..
IRFZ46 ,50V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
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IRFZ46.. ,50V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
1:212 Rectifier
HEXFET® Power MOSFET
. Dynamic dv/dt Rating
. 175°C Operati ..
ISO106 ,SIGNAL ISOLATION BUFFER AMPLIFIERS
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ISO1176TDW ,Isolated ProfiBus Transceiver with integrated transformer driver 16-SOIC -40 to 85Featuresan integrated circuit designed for bi-directional data1• Meets or Exceeds the Requirements ..
ISO120BG ,Precision Low Cost ISOLATION AMPLIFIERISO120ISO121Precision Low CostISOLATION AMPLIFIER
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IRFZ44VS
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR, Rectifier
Description
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
PD - 94050A
IRFZ44VS
RFZ441/L
HEXFET® Power MOSFET
VDSS = 60V
RDS(on) = 16.5mQ
ID = 55A
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for, provides the designer
iet,'ii:
_iii,it,
with an extremely efficient and reliable device tor use in a wide variety of 'N sr,"' _
applications. t _ .'
The D2Pak is a surface mount power package capable of accommodating die 2
sizes up to HEX-4. It provides the highest power capability and the lowest possible D Pak TO-262
on-resistance in any existing surface mount package. The D2Pak is suitable for IRFZ44VS IRFZ44VL
high current applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44VL) is available for low-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 55
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 39 A
IDM Pulsed Drain Current C) 220
PD @Tc = 25°C Power Dissipation 115 W
Linear Derating Factor 0.77 W/''C
VGS Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy© 115 mJ
IAR Avalanche Currenk0 55 A
EAR Repetitive Avalanche EnergyCD 11 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rae Junction-to-Case - 1 .3 °C/W
ReJA Junction-to-Ambient - 40
1
01/04/02
IRFZ44VS/l RFZ44VL
International
IEER Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = OV, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.062 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 16.5 mn VGS = 10V, ID = 31A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGs, ID = 250pA
gfs Forward Transconductance 24 - - S VDs = 25V, ID = 31AC0
loss Drain-to-Source Leakage Current - - 25 pA VDS = 60V, VGS = 0V
- - 250 N/ns = 48V, VGS = 0V, TJ = 150''C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 67 lo = 51A
Q95 Gate-to-Source Charge - - 18 nC VDs = 48V
di Gate-to-Drain ("Miller") Charge - - 25 N/ss = 10V, See Fig. 6 and 13 CO
tam) Turn-On Delay Time - 13 - VDD = 30V
t, Rise Time - 97 - ID = 51A
tam Turn-Off Delay Time - 40 - ns Rs = 9.19
tf Fall Time - 57 - Ro = 0.69, See Fig. 10 ©
LD Internal Drain Inductance - 4.5 - Between trf D
nH 6mm (0.25in.) Q )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1812 - VGS = 0V
Cogs Output Capacitance - 393 - Vos = 25V
Crss Reverse Transfer Capacitance - 103 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 55 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)® - - 220 p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V To = 25°C, Is = 51A, VGs = 0V GD
trr Reverse Recovery Time - 70 105 ns To = 25°C, IF = 51A
Qrr Reverse Recovery Charge - 146 219 nC di/dt = 100A/ps GD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting To = 25°C, L = 89pH
Rs = 259, IAS = 51A. (See Figure 12)
TJs 175°C
© ISD f 51A, di/dt s 227A/ps, VDD s V(BR)DSS,
© Pulse width S 300ps; duty cycle S 2%.
