IRFZ44V ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
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IRFZ44V -IRFZ44V.-IRFZ44VPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR, Rectifier
PD - 93957B
IRFZ44V
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
0 Optimized for SMPS Applications
VDSS = 60V
A RDS(on) = 16.5mQ
ID = 55A
Description
Advanced HEXFET® Power MOSFETs from International
Rectmer utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
beneht, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designerwith an extremely
eNcient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal TO-220AB
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 55
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 39 A
los, Pulsed Drain Current co 220
Pro @Tc = 25°C Power Dissipation 115 W
Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage , 20 V
EAS Single Pulse Avalanche Energy© 115 mJ
IAR Avalanche Current© 55 A
EAR Repetitive Avalanche Energy© 11 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew 10 Ibfoin (1 Atom)
Thermal Resistance
Parameter Typ. Max. Units
Rsoc Junction-to-Case - 1 .3
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
ReJA Junction-to-Ambient - 62
1/29/03
IRFZ44V
International
IEER Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250PA
M(BRmss/ATJ Breakdown Voltage Temp. Coemcient - 0.062 - V/°C Reference to 25°C, ID = 1mA
RDSW.) Static Drain-to-Source On-Resistance -.-r- - 16.5 mn Vss = 10V, ID = 31A (D
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V I/os = VGS, ID = 250pA
gts Forward Transconductance 24 - - S Vos = 25V, ID = 31A©
loss Drain-to-Source Leakage Current - - 25 pA Vros = 60V, VGS = 0V
- - 250 Vros = 48V, Vss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/tss = 20V
Gate-to-Source Reverse Leakage - - -100 Ves = -20V
% Total Gate Charge - - 67 ID = 51A
095 Gate-to-Source Charge - - 18 n0 Vos = 48V
di Gate-to-Drain ("Miller") Charge - - 25 V93 = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 13 - VDD = 30V
tr Rise Time - 97 - ID = 51A
tdiott) Turn-Off Delay Time - 40 - ns Rs = 9.19
tf Fall Time - 57 - Ro = 0.69, See Fig. 10 (D
Lo Internal Drain Inductance - 4.5 - Between tal D
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1812 - l/ss = 0V
Cass Output Capacitance - 393 - Vos = 25V
Crss Reverse Transfer Capacitance - 103 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 55 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)© - - 220 p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V To = 25°C, Is = 51A, Was = 0V ©
trr Reverse Recovery Time - 70 105 ns To = 25''C, IF = 51A
Qrr Reverse Recovery Charge - 146 219 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting To-- 25°C, L = 89pH
Rs = 259, IAS-- 51A. (See Figure 12)
TJs175°C
© ISD S 51A, di/dt S 227A/ps, VDD S V(BR)DSS:
© Pulse width f 300ps; duty cycle f 2%.
