IRFZ44RPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for all commercial-industrial
IRFZ44S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFZ44STRR ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packagePD - 9.893AIRFZ44S/L®HEXFET Power MOSFETl Advanced Process TechnologyDV = 60VDSSl Surface Mount (IR ..
IRFZ44STRRPBF , Power MOSFET
IRFZ44V ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistan ..
IRFZ44V. ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsSDescription®Advanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced ..
ISO102 ,SIGNAL ISOLATION BUFFER AMPLIFIERS
ISO1050 ,Isolated 5-V CAN TransceiversFeatures 3 DescriptionThe ISO1050 is a galvanically isolated CAN1• Meets the Requirements of ISO118 ..
ISO1050 ,Isolated 5-V CAN TransceiversFeatures bullet From: DW package Approval Pending To: VDE approved for both DUBand DW packages 1• C ..
ISO1050DUB ,Isolated 5 V CAN Transceiver 8-SOP -55 to 105Electrical Characteristics: Receiver ........ 812.1 Documentation Support.... 266.8 Switching Chara ..
ISO1050DUBR ,Isolated 5 V CAN Transceiver 8-SOP -55 to 105features cross-wire, overvoltage and loss of groundprotection from –27 V to 40 V and overtemperatur ..
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IRFZ44R-IRFZ44R.-IRFZ44RPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR, Rectifier
PD - 93956
IRFZ44R
HEXFET® Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching G
Fully Avalanche Rated
Drop in Replacement of the IRFZ44
VDSS = 60V
RDS(on) = 0.028n
ID = 50*A
for Linear/Audio Applications
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-
industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low TO-220AB
package cost of the TO-220 contribute to its wide acceptance
throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 50*
ID @ To = 1000 Continuous Drain Current, VGS @ 10V 36 A
IDM Pulsed Drain Current © 200
Po @Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
Ves Gate-to-Source Voltage t20 V
EAS Single Pulse Avalanche Energy © 100 mJ
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 tom)
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.0
Recs Case-to-Sink, Flat, Greased Surface 0.50 - ''C/W
RNA Junction-to-Ambient - 62
1
8/24/00
IRFZ44R
International
IEBR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250PA
AvungSS/ATJ Breakdown Voltage Temp. Coemcient - 0.060 - V/°C Reference to 25°C, ID = 1mA
Rosmn) Static Drain-to-Source On-Resistance - - 0.028 n Vcs = 10V, ID = 31A ©
VGSah) Gate Threshold Voltage 2.0 - 4.0 V I/os = VGS, ID = 250PA
gts Forward Transconductance 15 - - S Vos = 25V, ID = 31A@
loss Drain-to-Source Leakage Current - - 25 pA Vros = 60V, VGS = 0V
- - 250 Vros = 48V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/tss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - - 67 ID = 51A
095 Gate-to-Source Charge - - 18 no Vos = 48V
di Gate-to-Drain ("Miller") Charge - - 25 V93 = 10V, See Fig. 6 and 13 ©
tdwn) Turn-On Delay Time - 14 - VDD = 30V
tr Rise Time - 110 - ID = 51A
tum) Turn-Off Delay Time - 45 - ns Rs = 9.19
tf Fall Time - 92 - Ro = 0559, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between tad: _ D
nH 6mm (0.25in.) L )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1900 - l/ss = 0V
Coss Output Capacitance - 920 - Vos = 25V
Crss Reverse Transfer Capacitance - 170 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 50* MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)® - - 200 p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ = 25°C, IS = 51A, VGs = 0V ©
trr Reverse Recovery Time - 120 180 ns TJ = 25''C, IF = 51A
Qrr Reverse Recovery Charge - 0.53 0.80 wc di/dt = 100/Ups ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11 )
(D VDD = 25V, Starting Tu = 25°C, L = 44pH
Rs = 259, IAS-- 51A. (See Figure 12)
* Current limited by the package, (Die Current = 51A)
© ISD I 51A, di/dt s 250A/ps, vDD s V(BR)DSS.
T J C 175°C
(4) Pulse width f 300ps; duty cycle f 2%.
