IRFZ44PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational PD-9.51OC
I912 Rectifier IRFZ44
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
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IRFZ44R ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93956IRFZ44R®HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-Resistance V = 60 ..
IRFZ44R. ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDescription®Advanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced ..
IRFZ44RPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for all commercial-industrial
IRFZ44S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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ISO1050 ,Isolated 5-V CAN TransceiversFeatures 3 DescriptionThe ISO1050 is a galvanically isolated CAN1• Meets the Requirements of ISO118 ..
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IRFZ44PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International PD-9.510C
110R Rectifier _ llRFZ44
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
0 175°C Operating Temperature D -
Fast Switching VDSS - 60V
0 Ease of Paralleling
Simple Drive Requirements
RDS(on) = 0.0289
s ID = 50*A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-22O package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
, Parameter Max. Units
_ to @ To = 25°C Continuous Drain Current, VGs @ 10 V 50*
ID © Tc = 100°C Continuous Drain Current, l/ss @ 10 V 36 A
IDM Pulsed Drain Current (0 200
Po @ Tc = 25°C Power Dissipation 150 W
Linear Derating Factor 1.0 W/°C
VGs Gate-to-Source Voltage l "c20 V
EAs Single Pulse Avalanche Energy (2) _,,' 100 mJ
dv/dt Peak Diode Recovery dv/dt © , 4.5 V/ns
Tu Operating Junction and -55 to +175
TSTG Storage Temperature Range _ °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw _ IO lbf-in (1.1 N-m)
Thermal Resistance
7 Parameter Min. Typ. Max. Units
Rak; Junction-to-Case - 1 - 1.0
Recs Case-to-Sink, Flat, Greased Surface - 1 0.50 - OC/W
_ RNA Junction-to-Ambient - i - 62
I R FZ44
Electrical Characteristics @ To = 25°C (unless otherwise specified)
Parameter Min, Typ. Max. Units Test Conditions
V(Bnpss Drain-to-Source Breakdown Voltage 60 - - V Ves=OV, ID: 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.060 - V/°C Reference to 25°C, In: 1mA
RDS(on] Static Drain-to-Source On-Resistance - - 0.028 n Vss=10V, lo=31A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos=Ves, to: 250pA
bs Forward Transconductance 15 - - S VDs=25V, ID=31A ©
loss Drain-to-Source Leakage Current - -- 25 WA Vos--6tV, I/tss-HW
- - 250 VDs=48V, VGs=0V, TJ=150°C
less Gate-to-Source Forward Leakage 'tNr-eq - 100 n A Vss=20V
Gate-to-Source Reverse Leakage -... - -100 Vair=-201/
09 Total Gate Charge - - 67 |D=51A
Qgs Gate-to-Source Charge - - 18 n0 VDs=48V
di Gate-to-Drain ("Miller") Charge - - 25 VG5=1OV See Fig. 6 and 13 (D
td(0n) Turn-On Delay Time - 14 - VDD=30V
t, Rise Time - 110 - ns lo=51A
tdmm Turn-Off Delay Time - 45 - Re=9.1Q
t: Fall Time -... 92 - RD=O.55§2 See Figure 10 CO
Lo Internal Drain Inductance - 4.5 - tihtt"(if.iti'rf.') " D
nH from package GE
Ls Internal Source Inductance - 7.5 - Ind center 6f --
die contact s
Ciss Input Capacitance - 1900 -.. VGs=OV
Coss Output Capacitance - 920 - pF VDs=25V
Crss Reverse Transfer Capacitance - 170 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Test Conditions
Is Continuous Source Current - - 50' MOSFET symbol D
(Body Diode) A showing the Fir)
ISM Pulsed Source Current - - 200 integral reverse G LL
(Body Diode) Ci) p-n junction diode. s
Vso Diode Forward Voltage - - 2.5 V TJ=250C, Is=51A, Ves=0V ©
tr, Reverse Recovery Time - 120 180 ns TJ=25°C, IF=51A
er Reverse Recovery Charge - 0.53 0.80 “C di/dt=100A/us ©
ton Forward Turn-dn Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+LD)
Notes:
(O Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°CI L=44PH
RG=259, lAs--51A (See Figure 12)
* Current limited by the package, (Die Current =51A)
TJS175°C
© ISDSS1A, di/dts250A/us, VDDSV(BR)DSS.
© Pulse width s: 300 us; duty cycle s.2%.
