IRFZ44NSTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package +!,&$- ..
IRFZ44NSTRR ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internalconnection resistance and can dissipate up to 2.0W in atypi ..
IRFZ44PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational PD-9.51OC
I912 Rectifier IRFZ44
HEXFET® Power MOSFET
q Dynamic dv/dt Rating
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IRFZ44R ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 93956IRFZ44R®HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-Resistance V = 60 ..
IRFZ44R. ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageApplicationsDescription®Advanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced ..
IRFZ44RPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for all commercial-industrial
ISO102 ,SIGNAL ISOLATION BUFFER AMPLIFIERS
ISO1050 ,Isolated 5-V CAN TransceiversFeatures 3 DescriptionThe ISO1050 is a galvanically isolated CAN1• Meets the Requirements of ISO118 ..
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IRFZ44NSTRLPBF
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
PD - 95124
IRFZ44NSPbF
Surf M t(IRFZ44NS) IRFZ44NLPbF
Low-profilethrough-hole (IRFZ44NL) H EXF ET Power MOS FET
175°C Operating Temperature D
Fast Switching
FullyAvaIanche Rated
0 Lead-Free
International
TOR Rectifier
Advanced Process Technology
VDSS = 55V
RDS(on) = 0.01759.
Description G
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, s
combined with the fast switching speed and ruggedized
device design that H EXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
ID = 49A
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal D2Pak TO-262
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
The through-hole version (IRFZ44NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ To = 25°C Continuous Drain Current, Vas @ 10V 49
ID @ Tc = 100°C Continuous Drain Current, Vas © 10V 35 A
G, Pulsed Drain Current co 160
PD @TA = 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 W/°C
Vas Gate-to-Source Voltage t 20 V
IAR Avalanche Current(0 25 A
EAR Repetitive Avalanche EnergyC) 9.4 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ROJC Junction-to-Case - 1.5
RQJA Junction-to-Ambient - 4O °C/W
1
3/18/04
IRFZ44NS/LPbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Vss = 0V, lo = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.058 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - - 17.5 mg Ves = 10V, ID = 25A (0
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = Vas, ID = 250pA
gfs Forward Transconductance 19 - - S Vos = 25V, ID = 25A©
loss Drain-to-Source Leakage Current - - 25 PA I/os = 55V, Vas = 0V
- - 250 Vos = 44V, N/ss = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vss = 20V
Gate-to-Source Reverse Leakage - - -1OO VGS = -20V
% Total Gate Charge - - 63 ID = 25A
Qgs Gate-to-Source Charge - - 14 nC l/os = 44V
di Gate-to-Drain ("Miller") Charge - - 23 l/ss = 10V, See Fig. 6 and 13
tdmn) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 60 - ns ID = 25A
td(off) Turn-Off Delay Time - 44 - Re. =12Q
tt Fall Time - 45 - Vas = 10V, See Fig. 10 9)
LS Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 1470 - Ves = 0V
Coss Output Capacitance - 360 - Vrss = 25V
Crss Reverse Transfer Capacitance - 88 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 530© 150© mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 49 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)(0 - - 160 p-n junction diode. s
Va, Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 25A, N/ss = 0V ©
trr Reverse Recovery Time - 63 95 ns Tu = 25°C, IF = 25A
G, Reverse Recovery Charge - 170 260 no di/dt = 1OOA/us GD
ion Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Lsrrk)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting Tr, = 25°C, L = 0.48mH
RG = 259, IAS = 25A. (See Figure 12)
© ISD S 25A, di/dt S 230A/ps, VDD S V(BR)DSS,
T J f 175°C
© Pulse width : 400ps; duty cycle S 2%.
© This is a typical value at device destruction and represents
operation outside rated limits.
co This is a calculated value limited to To = 175°C .
** When mounted on 1" square PCB (FR-4 or G-1O Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
