IRFZ44NSTRR ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications because of its low internalconnection resistance and can dissipate up to 2.0W in atypi ..
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HEXFET® Power MOSFET
q Dynamic dv/dt Rating
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IRFZ44S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
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IRFZ44NL-IRFZ44NS-IRFZ44NSPBF-IRFZ44NSTRR
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 94153
IRFZ44NS
RFZ44NL
HEXFET© Power MOSFET
International
TOR Rectifier
Advanced Process Technology
Surface Mount (IRFZ44NS)
Low-profile through-hole (IRFZ44NL)
175°C Operating Temperature D
Fast Switching
o Fully Avalanche Rated
Description
Advanced HEXFET© Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely lowon-resistance persilicon area. This benefit, s
combined with the fast switching speed and ruggedized
device designthat HEXFET powerMOSFETs arewell known
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
VDSS = 55V
RDS(on) = 0.0175n
ID = 49A
The D2Pak is a surface mount power package capable of
accommodating die sizes upto HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2Pak is suitable
for high current applications because of its low internal D 2 Pak TO-262
connection resistance and can dissipate up to 2.0W in a
typical surface mount application.
Thethrough-hole version (IRFZ44NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ 10V 49
ID @ Tc = 100''C Continuous Drain Current, VGS @ 10V 35 A
IDM Pulsed Drain Current co 160
Pro @TA = 25°C Power Dissipation 3.8 W
PD @Tc = 25°C Power Dissipation 94 W
Linear Derating Factor 0.63 Wl°C
VGS Gate-to-Source Voltage i 20 V
IAR Avalanche CurrentC) 25 A
EAR Repetitive Avalanche EnergyC) 9.4 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range cc
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rauc Junction-to-Case - 1.5
ReJA Junction-to-Ambient - 40 "C/VV
1
03/13/01
IRFZ44NS/lRFZ44NL
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, lo = 250pA
AmeDss/ATJ Breakdown Voltage Temp. Coefficient - 0.058 - Vl°C Reference to 25°C, ID = 1mA
Row”) Static Drain-to-Source On-Resistance - - 17.5 mn VGS = 10V, ID = 25A ©
VGSith) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250PA
git Forward Transconductance 19 - - S Vros = 25V, ID = 25/W)
loss Drain-to-Source Leakage Current - - 25 pA Vros = 55V, VGS = 0V
- - 250 Vos = 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
% Total Gate Charge - - 63 ID = 25A
Qgs Gate-to-Source Charge - - 14 nC VDs = 44V
di Gate-to-Drain ("Miller") Charge - - 23 V93 = 10V, See Fig. 6 and 13
Gon) Turn-On Delay Time - 12 - l/oo = 28V
tr Rise Time - 60 - ns ID = 25A
tum) Turn-Off Delay Time - 44 - Rs = 12n
tr Fall Time - 45 - VGs = 10V, See Fig. 10 (if)
Ls Internal Source Inductance - 7.5 - nH Between lead,
and center of die contact
Ciss Input Capacitance - 1470 - VGS = 0V
Coss Output Capacitance - 360 - VDs = 25V
Crss Reverse Transfer Capacitance - 88 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 530S 150© mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 49 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)® - - 160 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 25A, VGS = 0V G)
trr Reverse Recovery Time - 63 95 ns Tu = 25°C, IF = 25A
Qrr Reverse Recovery Charge - 170 260 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
© Starting To = 25°C, L = 0.48mH
RG = 259, IAS = 25A. (See Figure 12)
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
© ISD S 25A, di/dt S 230A/ps, I/oo S V(BR)DSS:
T J s: 175°C
© Pulse width f 400ps; duty cycle f 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to To = 175°C .
For recommended footprint and soldering techniques refer to application note #AN-994.
