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q Dynamic dv/dt Rating
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IRFZ44N-IRFZ44NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD - 94053
IRFZ44N
H EXFET© Power MOSFET
Advanced Process Technology D
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature . rn
Fast Switching G
Fully Avalanche Rated
International
TOR Rectifier
Voss = 55V
RDS(on) = 17.5mQ
ID = 49A
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This beneht,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designerwith an extremely efficient
and reliable device for use in a wide variety ofapplications.
The TO-220 package is universally preferred for all "v., 1.
commerciaI-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ Tc = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current C)
Pro @Tc = 25°C
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current©
Repetitive Avalanche EnergyCD
Peak Diode Recovery dv/dt ©
Operating Junction and
Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case)
Mounting torque, 6-32 or M3 srew
10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter
Typ. Max.
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
0.50 -
Junction-to-Ambient
01/03/01
IRFZ44N
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V Was = 0V, ID = 250pA
AV
Roam) Static Drain-to-Source On-Resistance - - 17.5 mg VGS = 10V, ID = 25A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGs, ID = 250pA
gfs Forward Transconductance 19 - - S VDs = 25V, ID = 25AC9
Koss Drain-to-Source Leakage Current - - 25 pA Vros = 55V, VGS = 0V
- - 250 Vos = 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 63 lo = 25A
Qgs Gate-to-Source Charge - - 14 no Ws = 44V
di Gate-to-Drain ("Miller") Charge - - 23 VGS = 10V, See Fig. 6 and 13
tdmn) Turn-On Delay Time - 12 - VDD = 28V
tr Rise Time - 60 - ns ID = 25A
td(off) Turn-Off Delay Time - 44 - Rs = 12n
tf Fall Time - 45 - VGS = 10V, See Fig. 10 ©
Lo Internal Drain Inductance - 4.5 - Between Isad, D
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 1470 - VGS = 0V
Coss Output Capacitance - 360 - Vos = 25V
Crss Reverse Transfer Capacitance - 88 - pF f = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy© - 530© 150© mJ lAs = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current _ _ 49 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)C0 - - 160 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 v TJ = 25°C, Is = 25A, VGS = 0v ©
trr Reverse Recovery Time - 63 95 ns TJ = 25°C, IF = 25A
G, Reverse Recovery Charge - 170 260 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. (See Fig. 11)
© Starting To = 25°C, L = 0.48mH
RG = 259, lAs = 25A. (See Figure 12)
© ISD S 25A, di/dt S 230A/ps, VDD S V(BR)DSS:
T J f 175°C
© Pulse width f 400ps; duty cycle 3 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to TJ = 175°C .
