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IRFZ44EPBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
TOR, Rectifier
Description
Fifth Generation HEXFETs from International Rectiher utilize advanced processing
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
PD - 91671B
IRFZ44E
HEXFET® Power MOSFET
VDSS = 60V
A RDS(on) = 0.023Q
ID = 48A
techniques to achieve extremely low on-resistance per silicon area.
benefit, combined with the fast switching speed and ruggedized device design
that HEXFET Power MOSFETs are well known for, provides the designer with
an extremely efficient and reliable device for use in a wide variety ofapplications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry. TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
ID © Tc = 25°C Continuous Drain Current, Vss @ 10V 48
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 34 A
IDM Pulsed Drain Current (OG) 192
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/''C
VGS Gate-to-Source Voltage * 20 V
EAS Single Pulse Avalanche Energy© 220 mJ
IAR Avalanche Currenk0 29 A
EAR Repetitive Avalanche Energy© 11 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T: Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf-in (1.1N'm)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1 .4
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °C/W
RQJA Junction-to-Ambient - 62
1
7/6/99
IRFZ44E
International
IEER Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = OV, ID = 250PA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.063 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - - 0.023 Q VGS = 10V, ID = 29A Cr)
Vegan) Gate Threshold Voltage 2.0 - 4.0 V I/cos = VGs, ID = 250pA
gfs Forward Transconductance 15 - - S Ws = 30V, ID = 29A©
loss Drain-to-Source Leakage Current - - 25 pA VDS = 60V, VGS = 0V
- - 250 N/ns = 48V, VGS = 0V, TJ = 150''C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 60 lo = 29A
Q95 Gate-to-Source Charge - - 13 nC VDS = 48V
di Gate-to-Drain ("Miller") Charge - - 23 VGS = 10V, See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 12 - VDD = 30V
tr Rise Time - 60 - ns ID = 29A
td(off) Turn-Off Delay Time - 70 - Rs = 159
tf Fall Time - 70 - Ro = 1.19, See Fig. 10 ©
LD Internal Drain Inductance - 4.5 - Between Igad, iT, D
nH 6mm (0.25in.) AL“ l
from package G /
Ls Internal Source Inductance - 7.5 - . J
and center of die contact s
Ciss Input Capacitance - 1360 - VGs = 0V
Cogs Output Capacitance - 420 - Vos = 25V
Crss Reverse Transfer Capacitance - 160 - pF f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 48 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)© - - 192 p-n junction diode. s
Vso Diode Forward Voltage - - 1.3 V To = 25°C, Is = 29A, N/ss = 0V ©
trr Reverse Recovery Time - 69 104 ns To = 25°C, IF = 29A
Qrr Reverse Recovery Charge - 177 266 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 520pH
Rs = 259, IAS = 29A. (See Figure 12)
TJs 175°C
© ISD f 29A, di/dt s 320A/ps, VDD s V(BR)DSS,
GD Pulse width S 300ps; duty cycle S 2%.
