IRFZ44EL ,60V Single N-Channel HEXFET Power MOSFET in a TO-262 packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFZ44EPBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The lowthermal resistance and ..
IRFZ44N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 94053IRFZ44N®HEXFET Power MOSFETl Advanced Process TechnologyDV = 55Vl Ultra Low On-Resistance ..
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ISO102 ,SIGNAL ISOLATION BUFFER AMPLIFIERS
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ISO1050DUB ,Isolated 5 V CAN Transceiver 8-SOP -55 to 105Electrical Characteristics: Receiver ........ 812.1 Documentation Support.... 266.8 Switching Chara ..
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IRFZ44EL
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
ISER Rectifier
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device
design that HEXFET Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of accommodating die
Advanced Process Technology
Surface Mount (IRFZ44ES)
Low-profile through-hole (IRFZ44EL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
PRELIMINARY
PD-9.1714
IRFZ44ES/L
HEXFET® Power MOSFET
VDSS = 60V
RDS(on) = 0.0239
ID = 48A
sizes up to HEX-4. It provides the highest power capability and the lowest D2Pak T0452
possible on-resistance in any existing surface mount package. The D2Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ44EL) is available for low-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
b @ To = 25°C Continuous Drain Current, VGS @ ION/CO 48
ID @ TC = 100°C Continuous Drain Current, I/ss @ 10V© 34 A
IDM Pulsed Drain Current cos 192
PD @Tc = 25°C Power Dissipation 110 W
Linear Derating Factor 0.71 W/°C
VGS Gate-to-Source Voltage 1 20 V
EAS Single Pulse Avalanche Energy®© 220 mJ
IAR Avalanche CurrentC) 29 A
EAR Repetitive Avalanche Energy© 11 mJ
dv/dt Peak Diode Recovery dv/dt ($6) 5.0 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1Nom)
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 1.4
Recs Case-to-Sink, Flat, Greased Surface 0.50 - °CNV
ReJA Junction-to-Ambient - 62
1
11/18/97
IRFZ44ES/L International
ICUR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGs = 0V, ID = 250pA
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient - 0.063 - V/°C Reference to 25°C, ID = 1mAS
RDs(on) Static Drain-to-Source On-Resistance - - 0.023 Q VGs = 10V, lo = 29A GD
l/sam) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGs, ID = 250pA
gts Forward Transconductance 15 - - S VDS = 30V, ID = 29AS
loss Drain-to-Source Leakage Current - - 25 pA Vros = 60V, VGS = 0V
- - 250 VDs = 48V, VGs = 0V, Tu = 150°C
I Gate-to-Source Forward Leakaqe - - 100 n A VGS = 20V
GSS Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 60 ID = 29A
Qqs Gate-to-Source Charge - - 13 nC VDS = 48V
di Gate-to-Drain ("Miller") Charge - - 23 N/ss = 10V, See Fig. 6 and 13 2i)S
tdwn) Turn-On Delay Time - 12 - VDD = 30V
tr Rise Time - 60 - ID = 29A
tdmm Turn-Off Delay Time - 70 - ns Rs = 159
tf Fall Time - 70 - RD = 1.19, See Fig. 10 Cii)S
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1360 - VGs = 0V
Coss Output Capacitance - 420 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 160 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 48 MOSFET symbol D
(Body Diode) A showing the H2:
ISM Pulsed Source Current integral reverse G E
(Body Diode)(0 -- - 192 p-n junction diode. s
l/so Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 29A, VGS = 0V GD
trr Reverse Recovery Time - 69 104 ns Tu = 25°C, IF = 29A
er Reverse Recovery Charge - 177 266 nC di/dt = 100A/ps CD
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by GD Pulse width f 300ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 )
© Starting To = 25°C, L = 520pH
Rs = 259, IAS = 29A. (See Figure 12)
© TSD f 29A, di/dt S 320A/ps, VDD f 1/(BR)DSS,
T J 3 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
2
s Uses IRFZ44E data and test conditions
