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IRFZ34VL
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Optimized for SMPS Applications
Description
Advanced HEXFET8 Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable
device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in any
existing surface mount package. The D2Pak is suitable for
PD - 94180A
llRFZ341/S
IRFZ34VL
HEXFET6 Power MOSFET
Voss = 60V
A RDS(0n) = 28mQ
ID = 30A
ti,iiii,iiii), F,''
t ".-'
high currentapplications because ofits low internal connection D2Pak TO-l
resistance and can dissipate up to 2.0W in a typical surface IRFZ34VS IRFZ34VL
mount application.
The through-hole version (IRFZ34VL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter Max. Units
ID © To = 25°C Continuous Drain Current, Ves © 10V© 30
ID @ Tc = 100°C Continuous Drain Current, l/ss @ 10)/(S) 21 A
IDM Pulsed Drain Current cos 120
PD @TC = 25°C Power Dissipation 70 W
Linear Derating Factor 0.46 W/°C
Ves Gate-to-Source Voltage t 20 V
IAR Avalanche Current0D 30 A
EAR Repetitive Avalanche EnergyC) 7.0 mJ
dv/dt Peak Diode Recovery dv/dt Coco 4.5 V/ns
To Operating Junction and -55 to + 175
Tsms Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RM; Junction-to-Case - 2.15
ReJA Junction-to-Ambient (PCB Mounted)" - 4O "C/W
1
09/15/09
IRFZ34VS/l RFZ34VL
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 -- -- V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.062 - V/°C Reference to 25°C, ID = ImAS
RDS(on) Static Drain-to-Source On-Resistance - - 28 m9 Vss = 10V, ID = 18A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V Vos = VGS, ID = 250pA
gfs Forward Transconductance 15 - - S Vos = 25V, ID = 18AC9(S)
loss Drain-to-Source Leakage Current - - 25 pA Vros = 60V, Vss = 0V
- - 250 VDS = 48V, Vss = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A Vas = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 49 ID = 30A
Qgs Gate-to-Source Charge - - 12 nC Vos = 48V
di Gate-to-Drain ("Miller") Charge - - 18 Vias = 10V, See Fig. 6 and 13 s
td(on) Turn-On Delay Time - IO - VDD = 30V
tr Rise Time - 65 - ns ID = 30A
td(oit) Turn-Off Delay Time - 31 - Rs = 129
tt Fall Time - 40 - VGs = 10V, See Fig. 10 CPS
u, Internal Drain Inductance - 4.5 - Between tad., D
nH 6mm (0.25m.) SQ: )
Ls Internal Source Inductance -.-.- 7.5 --.- from package .
and center of die contact s
Ciss Input Capacitance - 1120 - Vas = 0V
Coss Output Capacitance - 250 - Vos = 25V
Crss Reverse Transfer Capacitance - 59 - pF f = 1.0MH2, See Fig. 5 s
EAs Single Pulse Avalanche Energy©@ - 260 81 mJ
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
. - - 30 .
(Body Diode) A showing the
ISM Pulsed Source Current integral reverse G
(Body Diode)© - - 120 p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V TJ = 25°C, Is = 30A, Vas = 0V ©
trr Reverse Recovery Time - 70 110 ns TJ = 25°C, IF = 30A
G, Reverse Recovery Charge - 99 150 nC di/dt = 100A/ps ©(S)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
© Repetitive rating; pulse width limited by © Pulse width f 400ps; duty cycle f 2%.
max. junction temperature. ( See fig. 11 ) s Uses IRFZ34V data and test conditions.
© Starting To = 25°C, L =180pH
Rs = 259, lAs = 30A. (See Figure 12)
© Iso S 30A, di/dt S 250NUS, VDD S V(BR)DSS!
To S 175°C
** When mounted on 1" square PCB (FR-4 or G-1O Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
