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IRFZ34S
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
Ieaa Rectifier
PD - 9.892A
IRFZ34S/ L
Advanced Process Technology
Surface Mount (IRFZ34S)
Low-profile through-hole (IRFZ34L)
175°C Operating Temperature
Fast Switching
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, providesthe designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
HEXFET® Power MOSFET
VDSS = 60V
RDS(on) = 0.0500
ID = 30A
highest power capability and the lowest possible on- D 2 Pak To.262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
b @ To = 25°C Continuous Drain Current, I/ss @ 10VS 30
ID @ Tc = 100°C Continuous Drain Current, I/ss @ 10V© 21 A
IDM Pulsed Drain Current cos 120
PD @TA = 25°C Power Dissipation 3.7 W
PD @Tc = 25°C Power Dissipation 88 W
Linear Derating Factor 0.59 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©S 200 mJ
dv/dt Peak Diode Recovery dv/dt SS 4.5 V/ns
To Operating Junction and -55 to + 175 o
TSTG Storage Temperature Range '9
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 1.7 "C/W
ReJA Junction-to-Ambient ( PCB Mounted,steady-state)** - 40
8/25/97
IRFZ34S/ L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefrcient - 0.065 - V/°C Reference to 25°C, ID =1mA©
RDs(on) Static Drain-to-Source On-Resistance - 0.05 f2 VGs =10V, ID = 18A CO
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gig Forward Transconductance 9.3 - - S VDs = 25V, ID = 18AS
loss Drain-to-Source Leakage Current - 25 pA l/os = 60V, VGS = 0V
- - 250 Vos = 48V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 46 ID = 30A
Qgs Gate-to-Source Charge - - 11 nC VDS = 48V
di Gate-to-Drain ("Miller") Charge - - 22 V68 = 10V, See Fig. 6 and 13 ©(0
tum) Turn-On Delay Time - 13 - VDD = 30V
tr Rise Time - 100 - ns ID = 30A
tum) Turn-Off Delay Time - 29 - R3 = 12n
tf Fall Time - 52 - RD = 1.0n, See Fig. 10 ©
LS Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 1200 - VGS = 0V
Coss Output Capacitance - 600 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 30 A showing the |—#
ISM Pulsed Source Current integral reverse G (tLl
(Body Diode) OD - - 120 p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V Tu = 25°C, Is = 30A, VGS = 0V co
trr Reverse Recovery Time - 120 230 ns Tu = 25°C, IF = 30A
er Reverse Recovery Charge - 700 1400 nC di/dt = 100A/ps cos
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© vDD = 25V, starting T J = 25°C, L = 260pH
Rs = 259, IAS = 30A. (See Figure 12)
© ISD S 30A, di/dt f 200A/ps, VDD f V(BR)DSS,
Tuf 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
co Pulse width 3 300ps; duty cycle s: 2%.
(5) Uses IRFZ34 data and test conditions
For recommended footprint and soldering techniques refer to application note #AN-994.
