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ISO102 ,SIGNAL ISOLATION BUFFER AMPLIFIERS
IRFZ34NS
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD-9.1311A
IRFZ34NS/L
HEXFET® Power MOSFET
Advanced Process Technology D
Surface Mount (IRFZ34NS)
Low-profile through-hole (IRFZ34NL)
175°C Operating Temperature
Fast Switching G
FullyAvalanche Rated
International
TOR, Rectifier
VDSS = 55V
RDS(on) = 0.0409
ID = 29A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, providesthe designerwith an extremely
effcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- DZPak TO-262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ34NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
b @ TC = 25°C Continuous Drain Current, VGS @ ION/S 29
ID @ Tc = 100°C Continuous Drain Current, I/ss @ ION/S 20 A
IDM Pulsed Drain Current cos 100
PD @TA= 25°C Power Dissipation 3.8 W
Pro @Tc = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©© 130 ml
IAR Avalanche CurrentCD 16 A
EAR Repetitive Avalanche Energy(0 5.6 mJ
dv/dt Peak Diode Recovery dv/dt ($69 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range "C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.2 "CM/
Rasa Junction-to-Ambient (PCB mount) ** - 40
8/25/97
International
IRFZ34NS/L
TOR Rectifier
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.052 - V/°C Reference to 25°C, ID = ImA(0
RDs(ON) Static Drain-to-Source On-Resistance - - 0.040 Q VGs = 10V, ID = 16AC0
VGSW Gate Threshold Voltage 2.0 - 4.0 V VDs = VGS, ID = 250pA
gfs Forward Transconductance 6.5 - - S VDS = 25V, ID = 16A
loss Drain-to-Source Leakage Current - - 25 HA VDS = 55V, VGS = 0V
- - 250 VDs = 44V, VGS = 0V, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
A Total Gate Charge - - 34 ID = 16A
Qgs Gate-to-Source Charge - - 6.8 nC VDs = 44V
di Gate-to-Drain ("Miller") Charge - - 14 I/ss = 10V, See Fig. 6 and 13 C4)6)
td(on) Turn-On Delay Time - 7.0 - VDD = 28V
tr Rise Time - 49 - ns ID = 16A
tdwff) Turn-Off Delay Time - 31 - RG = 189
tf FallTime - 40 - RD = 1.8n, See Fig. 10 COG)
Ls Internal Source Inductance -- 7.5 -- nH Between lead, .
and center of die contact
Ciss Input Capacitance - 700 - VGs = 0V
Coss Output Capacitance - 240 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz, See Fig. 5©
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFETsymbol D
(Body Diode) --- --.- 29 A showing the Lt
ISM Pulsed Source Current integral reverse G (IO-a.
(Body Diode) co - - 100 p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V To = 25°C, Is = 16A, VGS = 0V ©
trr Reverse Recovery Time - 57 86 ns T J = 25°C, IF = 16A
er Reverse RecoveryCharge - 130 200 nC di/dt = 100A/ps (4)(S)
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
© ISD S 16 A, di/dt f 420A/ps, VDD f V(BR)DSS,
max. junction temperature. ( See fig. 11 )
TJs175°C
C) l/DD = 25V, starting TJ = 25°C, L = 610pH
. © Pulse width S 300ps; duty cycle S 2%.
Rs = 250, IAS = 16A. (See Figure 12)
Cs) Uses IRFZ34N data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
