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IRFZ34N-IRFZ34N.-IRFZ34NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD -9.1276C
IRFZ34N
HEXFET© Power MOSFET
International
TOR, Rectifier
o Advanced Process Technology D
o Ultra Low On-Resistance VDSS = 55V
o Dynamic dv/dt Rating
175 C Qperetmg Temperature RDS(on) = 0.040Q
o Fast Switching G
o Ease of Paralleling I - 29A
Description s D -
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer (si/id").",.).,.',.'",.",,,.:..),:
with an extremely efficient device for use in a wide "t5iijiiiii.isii--isii'
variety of applications. 'rt''''';''")"
The TO-EY) package is universally preferred for all
commercial-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 TO-220AB
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25''C Continuous Drain Current, I/ss @ 10V 29
ID @ Tc = 100°C Continuous Drain Current, Ves @ 10V 20 A
IDM Pulsed Drain Current co 100
PD @Tc = 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
VGS Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy© 65 ml
IAR Avalanche CurrentCD 16 A
EAR Repetitive Avalanche Energy© 6.8 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range (
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 2.2
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - "C/W
Ran Junction-to-Ambient - - 62
8/25/97
IRFZ34N International
TOR Rectifier
Electrical Characteristics @ TU = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient - 0.052 - V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.040 f2 l/ss = 10V, ID = 16A©
Vngh) Gate Threshold Voltage 2.0 - 4.0 V VDs = l/ss, ID = 250pA
git Forward Transconductance 6.5 - - S VDs = 25V, ID = 16A
loss Drain-to-Source Leakage Current - - 25 pA VDS = 55V, I/ss = 0V
- - 250 VDS = 44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 34 ID = 16A
Qgs Gate-to-Source Charge - - 6.8 nC VDs = 44V
di Gate-to-Drain ("Miller") Charge - - 14 VGS = 10V, See Fig. 6 and 13 C4)
tam) Turn-On Delay Time - 7.0 - VDD = 28V
tr Rise Time - 49 - ns ID = 16A
td(ott) Turn-Off Delay Time - 31 - RG = 189
tf Fall Time - 40 - RD = 1.89, See Fig. 10 G)
LD Internal Drain Inductance - 4.5 - Between lead, D
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 700 - VGs = 0V
Coss Output Capacitance - 240 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 29 MOSFET symbol D
(Body Diode) A showing the H1:
ISM Pulsed Source Current integral reverse G 1(
(Body Diode) co - - 100 p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V Tu = 25°C, Is = 16A, l/ss = 0V (4)
tn Reverse Recovery Time - 57 86 ns TJ = 25°C, IF = 16A
G, Reverse Recovery Charge - 130 200 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by LS+LD)
Notes:
co Repetltive _rating; pulse width limited by © lso s 16 A, di/dt s 420A/ps, VDD s V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ f 175°C
© VDD = 25V, starting T: = 25°C, L = 410pH © Pulse width f 300ps; duty cycles 2%.
Rs = 259, IAS = 16A. (See Figure 12)
