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IRFZ34E
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
::rciRliuctifier
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
o Ease of Paralleling
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at powerdissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
PD - 9.1672A
IRFZ34E
HEXFET6 Power MOSFET
VDSS = 60V
RDS(on) = 0.0429
ID = 28A
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V 28
b @ To = 100°C Continuous Drain Current, VGS @ 10V 20 A
IDM Pulsed Drain Current co 112
PD @Tc = 25°C Power Dissipation 68 W
Linear Derating Factor 0.46 W/°C
I/ss Gate-to-Source Voltage iv 20 V
EAS Single Pulse Avalanche Energy© 97 m]
IAR Avalanche CurrentCD 17 A
EAR Repetitive Avalanche Energy0) 6.8 ntl
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
T J Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 Ibf-in (1.1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Rac Junction-to-Case - - 2.2
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °CNV
ROJA Junction-to-Ambient - - 62
11/4/97
IRFZ34E
International
TOR Rectifier
Electrical Characteristics @ Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)Dss Drain-to-Source Breakdown Voltage 60 - - V VGs = 0V, ID = 250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.056 - V/°C Reference to 25°C, ID = 1mA
RDS(ON) Static Drain-to-Source On-Resistance - - 0.042 n I/ss = 10V, ID = 17A@
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gfs Forward Transconductance 7.6 - - S VDS = 25V, ID = 17A
loss Drain-to-Source Leakage Current - - 25 pA VDS = 60V, VGS = 0V
- - 250 VDS = 48V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
09 Total Gate Charge - - 30 ID = 17A
093 Gate-to-Source Charge - - 6.7 nC VDs = 48V
di Gate-to-Drain ("Miller") Charge - - 12 VGS = 10V, See Fig. 6 and 13 ©
td(on) Turn-On Delay Time - 5.1 - VDD = 30V
tr RiseTime - 30 - ns ID = 17A
tam) Turn-Off Delay Time - 22 - RG = 139
tr FaIITime - 30 - RD = 1.89, See Fig. 10 ©
LD Internal Drain Inductance - 4.5 - Between tad: D
nH 6mm (0.25in.) iii/ll-) )
from package G
Ls Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 680 - VGs = 0V
Cass Output Capacitance - 220 - pF VDS = 25V
Crss Reverse Transfer Capacitance - 80 - f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 28 MOSFET symbol D
(Body Diode) A showing the R2:
ISM Pulsed Source Current integral reverse G E
(Body Diode) co - - 100 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 17A, VGS = ov 69
trr Reverse Recovery Time - 63 95 ns TJ = 25°C, IF = 17A
Qrr Reverse Recovery Charge - 130 200 nC di/dt = 100A/ps co
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by Ls+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu = 25°C, L = 670pH
Rs = 259, IAS = 17A. (See Figure 12)
TJs175°C
© ISD S 17 A, di/dt S 200Alys, VDD S 1/(BR)DSS,
CD Pulse width f 300ps; duty cycle f 2%.
