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EOR Rectifier
PD-9.509B
I R F234
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q Dynamic dv/dt Ra ..
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q Dynamic dv/dt Rating
..
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IRFZ34-IRFZ34PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
EOR Rectifier
PD-9.5093
I R F234
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
tt 175°C Operating Temperature
o Fast Switching
o Ease of Paralleling
0 Simple Drive Requirements
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
D Voss--- 60V
RDS(on) = 0.0509
s h, ==EH3/X
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commerciaI-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
TO-220AB
Parameter Max. Units
ID (ii) To = 25°C Continuous Drain Current, VGs © 10 V 30
ID @ Tc = 100°C Continuous Drain Current, Vss @ 10 V 21 A
IDM Pulsed Drain Current Ci) 120
PD © To = 25°C Power Dissipation 88 W
Linear Derating Factor 0.59 W/°C
Vss Gate-to-Source Voltage i20 V
EAS Single Pulse Avalanche Energy © 200 ml
dv/dt Peak Diode Recovery dv/dt © 4.5 V/ns
Tu Operating Junction and -55 to +175
TSTG Storage Temperature Range “’0
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibf-in (1.1 N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
Reno Junction-to-Case - - 1 .7
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
Rem Junction-to-Ambient - - 62
IRFZ34
Electrical Characteristics tii) TJ = 25°C (unless otherwise specified)
I IEQR
G) Repetitive rating; pulse width limited by
max. junction temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L=259pH
Re=2SQ, |As=30A (See Figure 12)
Parameter '-'-"--7 Min. _y_i1.__ty_ryr_U_r1i.tr_,._Ire1st, Conditions -
V(Bnmss Drain-to-Source Breakdown Voltage 60 - - , v Fis%r/Ur,T---i%'Ji"
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.065 , - TV/OC Reference to 25°C, 19: 1mA 4
Roam) Static Drain-to-Source On-Resistance - - 0.050 , Q VGs=10V, ID=18A C4)
Vesah) Gate Threshold Voltage 2.0 - 4.0 V Vos=Vss, ID: 2500A ---.
gis Forward Transconductance 9.3 - - _fi_, Vos=25V, lo=18_A fl, -----.
loss Drain-to-Source Leakage Current - h 25 WA VDS=60V’ 1(as=01/
- - 250 VDs=48V, Vss=OV, TJ=15£
less Gate-to-Source Forward Leakage, -- - 100 n A Tia'l-rtiiii'C'"'""
Gate-to-Source Reverse Leakage - - -100 _ Ves=-20V
Ch, Total Gate Charge - - 46 lo=30A _
Qgs m Gate-to-Source Charge - - 11 H " Vos=48V
di Gate-to-Drain ("Miller") Charge - - 22 VGs=1OV See Fig. 6 and 13 ©
tdion) Turn-On Delay Time - --i--, 13 - Voo=30V
tr Rise Time - 100 - ns ID=30A
td(oa) Turn-Off Delay Time .r.r-'- 29 - Rs--12Q
t1 Fall Time - 52 - RD=1.OQ See Figure 10 ©
Lo Internal Drain Inductance - 4.5 - [t,t,v,t"atiand.')
nH from package
Ls Internal Source Inductance - 7.5 - Ind center df
die contact
Ciss Input Capacitance - 1200 - VGs=0V
Coss Output Capacitance - 600 - PF VDs=25V
Crss Reverse Transfer Capacitance - 100 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max, Units I Test Conditions
ls Continuous Source Current - - 30 MOSFET symbol D
(Body Diode) A showing the L,-ai.
ISM Pulsed Source Current - - 120 integral reverse G (trl
(Body Diode) C) p-njunction diode. s [
Vso Diode Forward Voltage - - 1.6 V TJ=25°C, fs=30A, Vss--0V ©
trr Reverse Recovery Time - 120 230 ns TJ=25°C, IF=30A
er Reverse Recovery Charge -... 0.70 1.4 p0 di/dt=100A/prs co
ton Forward Turn-On Time Intrinsic tum-on time is neglegible (turn-on is dominated by Lsrluo)
Notes:
© IsossoA, di/de00A/ps, VDDSV(BR)DSS.
TJS175°C
© Pulse width S 300 us; duty cycle 32%.
