IRFZ24VS ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageApplicationsSDescription®Advanced HEXFET Power MOSFETs from International Rectifier utilizeadvanced ..
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IRFZ24VL-IRFZ24VS
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Reciiiier
PD - 94182
IRFZ24VS
IRFZ24VL
HEXFET© Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching G
Fully Avalanche Rated
Optimized for SMPS Applications
Voss = 60V
A RDS(on) = 60mn
ID = 17A
Description
Advanced HEXFET8 Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely effcient and reliable device for
use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating
die sizes up to HEX-4. It provides the highest power capability and the
lowest possible on-resistance in any existing surface mount package. The D2Pak TO-262
D2Pak is suitable for high current applications because of its low internal IRFZ24VS IRFZ24VL
connection resistance and can dissipate up to 2.0W in a typical surface
mount application.
The through-hole version (IRFZ24VL) is availablefor low-profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGS @ ION/O) 17
ID @ To = 100°C Continuous Drain Current, VGS @ ION/OD 12 A
IDM Pulsed Drain Current (0© 68
Pro @Tc = 25°C Power Dissipation 44 W
Linear Derating Factor 0.29 W/°C
Ves Gate-to-Source Voltage i 20 V
IAR Avalanche CurrentC) 17 A
EAR Repetitive Avalanche EnergyCD 4.4 mJ
dv/dt Peak Diode Recovery dv/dt ©© 4.2 V/ns
To Operating Junction and -55 to + 175
TSTG Storage Temperature Range °c
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
Rac Junction-to-Case - 3.4 "C/W
RGJA Junction-to-Ambient (PCB Mounted)** - 40
1
02/ 1 4/02
IRFZ24VS/lRFZ24VL International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V N/ss = 0V, ID = 250PA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.06 - V/°C Reference to 25°C, ID = ImA©
RDS(on) Static Drain-to-Source On-Resistance - - 60 mn VGs = 10V, ID = 10A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = I/cs, ID = 250pA
gts Forward Transconductance 7.8 - - S Vos = 25V, ID = 10A@®
loss Drain-to-Source Leakage Current - - 25 pA Vos = 60V, VGS = 0V
- - 250 VDS = 48V, VGS = 0V, To = 150°C
less Gate-to-Source Forward Leakage - - 100 n A N/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGs = -20V
% Total Gate Charge - - 23 ID = 17A
Q95 Gate-to-Source Charge -- - 7.7 nC Vos = 48V
di Gate-to-Drain ("Miller") Charge - - 6.2 VGS = 10V, See Fig. 6 and 13 co
tdwn) Turn-On Delay Time - 7.6 - VDD = 30V
tr Rise Time - 46 - ns ID = 17A
tam) Turn-Off Delay Time - 21 - Rs = 189
tt Fall Time - 24 - VGs = 10V, See Fig. 10 EM)
u, Internal Drain Inductance - 4.5 - Between lsad, D
nH 6mm (0.25m.) Q: )
from package G
LS Internal Source Inductance - 7.5 - .
and center of die contact s
Ciss Input Capacitance - 590 - N/ss = 0V
Cass Output Capacitance - 140 - VDS = 25V
Crss Reverse Transfer Capacitance - 23 - pF f = 1.0MHz, See Fig. 5 co
EAS Single Pulse Avalanche Energy©© - 1406) 43© mJ lAs = 17A, L = 300pH
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 68 integral reverse G
(Body Diode)© p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, Is = 17A, VGS = 0V ©
trr Reverse Recovery Time - 53 79 ns TJ = 25°C, IF = 17A
Gr Reverse Recovery Charge - 90 130 nC di/dt = 100A/ps ©©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (tum-on is dominated by L3+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11 )
© Starting TJ = 25''C, L = 300pH
Rs = 25O, IAS-- 17A, VGS=10V (See Figure 12)
© ISD S 17A, di/dt S 240A/ps, VDD S V(BR)DSSI
TJ f 175°C
co Pulse width s 400ps; duty cycle I 2%.
s This is a typical value at device destruction and represents
operation outside rated limits.
© This is a calculated value limited to Tu = 175°C .
© Uses IRFZ24V data and test conditions.
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
