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IRFZ24S
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR, Rectifier
PD - 9.891A
IRFZ24S/ L
Advanced Process Technology
Surface Mount (IRFZ24S)
Low-profile through-hole (IRFZ24L)
175°C Operating Temperature
Fast Switching
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
HEXFET® Power MOSFET
D l/DSS = 60V
RDS(on) = 0.109
ID = 17A
highest power capability and the lowest possible on- D 2 Pak TO-262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ24L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V© 17
ID @ Tc = 100°C Continuous Drain Current, VGS @ ION/S 12 A
IDM Pulsed Drain Current C)6) 68
Pro @TA = 25°C Power Dissipation 3.7 W
PD @Tc = 25°C Power Dissipation 60 W
Linear Derating Factor 0.40 W/°C
Ves Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©6) 100 mJ
dv/dt Peak Diode Recovery dv/dt ©S 4.5 V/ns
TJ Operating Junction and -55 to + 175 O
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 2.5 to
RNA Junction-to-Ambient ( PCB Mounted/steady-state)" - 40 C/W
8/25/97
IRFZ24S/ L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefrcient - 0.061 - V/°C Reference to 25°C, ID =1mA©
RDs(on) Static Drain-to-Source On-Resistance - 0.10 f2 VGs =10V, ID = 10A CO
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gig Forward Transconductance 5.5 - - S VDs = 25V, ID = 10AS
loss Drain-to-Source Leakage Current - 25 pA l/os = 60V, VGS = 0V
- - 250 Vos = 48V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 25 ID = 17A
Qgs Gate-to-Source Charge - - 5.8 nC VDS = 48V
di Gate-to-Drain ("Miller") Charge - - 11 V68 = 10V, See Fig. 6 and 13 ©(0
tum) Turn-On Delay Time - 13 - VDD = 30V
tr Rise Time - 58 - ns ID = 17A
tum) Turn-Off Delay Time - 25 - R3 = 189
tf Fall Time - 42 - RD = 1.79, See Fig. 10 ©
LS Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 640 - VGS = 0V
Coss Output Capacitance - 360 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 79 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 17 A showing the |—#
ISM Pulsed Source Current integral reverse G (tLl
(Body Diode) OD - - 68 p-n junction diode. s
VSD Diode Forward Voltage - - 1.5 V Tu = 25°C, Is = 17A, VGS = 0V co
trr Reverse Recovery Time - 88 180 ns Tu = 25°C, IF = 17A
er Reverse Recovery Charge - 290 640 nC di/dt = 100A/ps cos
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting T: = 25°C, L = 400pH
Rs = 259, IAS = 17A. (See Figure 12)
© ISD S 17A, di/dt f 140A/ps, VDD f V(BR)DSS,
Tuf 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
co Pulse width 3 300ps; duty cycle s: 2%.
(5) Uses IRFZ24 data and test conditions
For recommended footprint and soldering techniques refer to application note #AN-994.
