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IRFZ24NSTRLPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
International
TOR Rectifier
Advanced Process Technology
Surface Mount (IRFZ24NS)
Low-profilethrough-hole (IRF224NL)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
0 Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized devicedesignthatHEXFET PowerMOSFETs
are well known for, providesthe designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-holeversion (IRF224NL) is availableforlow-
profileapplications.
Absolute Maximum Ratings
PD - 95147
IRFZ24NS/LPbF
HEXFET® Power MOSFET
VDSS = 55V
RDS(on) = 0.079
lro=17A
TO-262
Parameter
ID © To = 25°C Continuous Drain Current, Vss @ 10V©
ID @ To = 100°C Continuous Drain Current, l/tss @ 10V©
G, Pulsed Drain Current COG)
Po @TA = 25°C Power Dissipation
PD @TC = 25°C Power Dissipation
Linear Derating Factor
Ves Gate-to-Source Voltage
EAg Single Pulse Avalanche Energy©S
IAR Avalanche Current0)
EAR Repetitive Avalanche Energy(0
dv/dt Peak Diode Recovery dv/dt ©6)
TJ Operating Junction and
TSTG Storage Temperature Range
-55 to + 175
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Max. Units
Rea:: J unction-to-Case
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)"
04/19/04
IRFZ24NS/LPbF
International
TOR Rectifier
Electrical Characteristics © Tg = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(Bnmss Drain-to-Source Breakdown Voltage 55 - - V VGs = 0V, ID = 250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coefficient - 0.052 - V/°C Reference to 25°C, ID =1mA©
Roam) Static Drain-to-Source On-Resistance - - 0.07 Q Vss =1OV, ID = 10A ©
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = /ss, ID = 250pA
gfs Forward Transconductance 4.5 - - S Vos = 25V, ID = 1OA©
loss Drain-to-Source Leakage Current - - 25 pA Vos = 55V, Vas = 0V
- - 250 Vos = 44V, VGS = 0V, TI, = 150°C
lass Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
09 Total Gate Charge - - 20 ID = 10A
q, Gate-to-Source Charge - - 5.3 nC Vos = 44V
di Gate-to-Drain ("Miller") Charge - - 7.6 Vas = 10V, See Fig. 6 and 13 (96)
td(on) Turn-On Delay Time - 4.9 - VDD = 28V
t, RiseTime - 34 - ID = 10A
td(off) Turn-Off Delay Time - 19 - ns Rs = 249
tt FallTime - 27 - Ro = 2.69, See Fig. 10 coco
LS Internal Source Inductance -.-.- 7.5 -- nH Between lead, .
and center of die contact
Ciss Input Capacitance - 370 - Vas = 0V
Coss Output Capacitance - 140 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 65 - f = 1 .0MHz, See Fig. 56)
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 17 A showing the
ISM Pulsed Source Current integral reverse 6
(Body Diode) (D - - 68 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 10A, Vss = 0V 6)
trr Reverse Recovery Time - 56 83 ns Tu = 25°C, IF = 10A
Qrr Reverse Recovery Charge - 120 180 nC di/dt = 100A/us 3)(9
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© Starting Tu
= 25°C, L =1.0mH
RG = 259, IAS = 10A. (See Figure 12)
co ISD S 10A, di/dt S 280A/ps, VDD f V(BR)DSS.
Tus 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
GD Pulse width E 280ps; duty cycle 3 2%.
s Uses IRFZ24N data and test conditions
