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IRFZ24NL-IRFZ24NS-IRFZ24NSTRR
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
PD - 9.13558
IRFZ24NS/L
HEXFET® Power MOSFET
Advanced Process Technology D
Surface Mount (IRFZ24NS)
Low-profile through-hole (IRFZ24NL)
175°C Operating Temperature
Fast Switching G
FullyAvalanche Rated
International
TOR, Rectifier
VDSS = 55V
RDS(on) = 0.079
ID: 17A
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
arewell known for, providesthe designerwith an extremely
effcient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on- D 2 Pak TO-262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ24NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
b @ Tc = 25°C Continuous Drain Current, VGS @ ION/S 17
ID @ Tc = 100°C Continuous Drain Current, Veg @ 10VC9 12 A
IDM Pulsed Drain Current C)6) 68
Pro @TA= 25°C Power Dissipation 3.8 W
PD @Tc = 25''C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
I/ss Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©S 71 m]
IAR Avalanche Current0) 10 A
EAR Repetitive Avalanche Energy© 4.5 rN
dv/dt Peak Diode Recovery dv/dt ©6) 6.8 V/ns
Tu Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.3 to
RNA Junction-to-Ambient ( PCB Mounted/steady-state)" - 40 C/W
9/22/97
IRFZ24NS/L International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - v l/GS = 0v, ID = 250PA
AV
RDs(on) Static Drain-to-Source On-Resistance - - 0.07 f2 VGs =10V, ID = 10A CO
Vngh) Gate Threshold Voltage 2.0 - 4.0 V VDs = l/ss, ID = 250pA
git Forward Transconductance 4.5 - - S Ws = 25V, ID = 10AS
loss Drain-to-Source Leakage Current - - 25 p A VDS = 55V, VGS = 0V
- - 250 VDS = 44V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
Qg Total Gate Charge - - 20 ID = 10A
Qgs Gate-to-Source Charge - - 5.3 nC VDS = 44V
di Gate-to-Drain ("Miller") Charge - - 7.6 VGS = 10V, See Fig. 6 and 13 ©©
td(on) Turn-On Delay Time - 4.9 - VDD = 28V
tr Rise Time - 34 - ns Ir, = 10A
tam) Turn-Off Delay Time - 19 - R9 = 249
tr FaIITime - 27 - RD = 2.69, See Fig. 10 C456)
Ls Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 370 - VGs = 0V
Coss Output Capacitance - 140 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 65 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 17 A showing the [-,
ISM Pulsed Source Current integral reverse G (tLl
(Body Diode) C) - - 68 p-n junction diode. S
VSD Diode Forward Voltage - - 1.3 V To = 25°C, Is = 10A, VGS = 0V GD
trr Reverse Recovery Time - 56 83 ns To = 25°C, IF = 10A
er Reverse Recovery Charge - 120 180 nC di/dt = 100A/ps cos
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by © Pulse width 3 280ps; duty cycle 3 2%.
max. junction temperature. ( See fig. 11 )
© Starting TJ = 25°C, L =1.0mH G) Uses IRFZ24N data and test conditions
Rs = Mn, 'As = 10A. (See Figure 12)
© Iso S 10A, di/dt f 280/Ups, VDD f V(BR)DSS,
Tof 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
