IRFZ24NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
IRFZ24NS ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.2The D Pak is a surface mount power package capable ofaccommodating die sizes up to HE ..
IRFZ24NSTRLPBF ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFZ24NSTRR ,55V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFZ24PBF , Power MOSFET
IRFZ24S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The Stealth™ family o Operating Temperature . . . . . . . . . . . . . . . . . . . . ..
ISL9R18120P2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
IRFZ24N-IRFZ24NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
International
:rciRRectifier
HEXFET@ Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Description
Fifth Generation HEXFET© power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device designthat HEXFET
power MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide variety
of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
PD - 91354A
IRFZ24N
VDSS = 55V
FN, RDS(on) = 0.079
s ID = 17A
levels to approximately 50 watts. The Iowthermal resistance TO-220AB
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, VGs @ 10V 17
ID @ Tc = 100°C Continuous Drain Current, VGS @ 10V 12 A
IDM Pulsed Drain Current C) 68
Po @Tc = 25°C Power Dissipation 45 W
Linear Derating Factor 0.30 W/°C
VGS Gate-to-Source Voltage Elo V
EAs Single Pulse Avalanche Energy © 71 mJ
IAR Avalanche Current© 10 A
EAR Repetitive Avalanche Energy0) 4.5 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range ''C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 Ibf-in (1 .1N-m)
Thermal Resistance
Parameter Min. Typ. Max. Units
ReJC Junction-to-Case - - 3.3
Recs Case-to-Sink, Flat, Greased Surface - 0.50 - °C/W
ROJA Junction-to-Ambient - - 62
1
9/13/99
IRFZ24N
International
TOR Rectifier
Electrical Characteristics ti) T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 - - V I/ss = 0V, ID = 250PA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coemcient .-..- 0.052 -.._ V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - - 0.07 n Ves = 10V, lo = 10A Cr)
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V V93 = VGs, ID = 250pA
gts Forward Transconductance 4.5 - - S Vros = 25V, ID = 10A
Koss Drain-to-Source Leakage Current : T, 22550 pA x3: , Cj, V2: =" tf, TJ = 150°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 20 ID = 10A
Qgs Gate-to-Source Charge - - 5.3 nC Vros = 44V
di Gate-to-Drain ("Miller") Charge - - 7.6 VGS = 10V, See Fig. 6 and 13 ©
tam) Turn-On Delay Time - 4.9 - VDD = 28V
t, Rise Time - 34 - ID = 10A
tdm) Turn-Off Delay Time - 19 - ns Rs = 24n
tf Fall Time - 27 - RD = 2.69, See Fig. 10 @
Ln Internal Drain Inductance - 4.5 - Between f) D
nH 6mm (0.25in.) E )
from package G
Ls Internal Source Inductance - 7.5 - and center of die contact s
Ciss Input Capacitance - 370 - VGS = 0V
Cass Output Capacitance - 140 - pF I/os = 25V
Crss Reverse Transfer Capacitance - 65 - l f = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 17 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current _ _ 68 integral reverse G
(Body Diode) (O p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V Tu = 25°C, ls = 10A, VGS = 0V GD
trr Reverse Recovery Time - 56 83 ns Tu = 25°C, IF = 10A
Qrr Reverse RecoveryCharge - 120 180 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting TJ = 25°C, L = 1.0mH
Rs = 259, IAS-- 10A. (See Figure 12)
Tr-: 175°C
© ISO S 10A, di/dt S 280A/ps, VDD S V(BR)DSS,
© Pulse width f 300ps; duty cycle 3 2%.
