IRFZ20 ,HEXFET TRANSISTORSapplications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifi ..
IRFZ20 ,HEXFET TRANSISTORSME D I 0055053 0000072 ll I
INTERNATIONAL RECTIFIER
Data Sheet No. PD-9.434B
INTERNATIONAL ..
IRFZ22 ,HEXFET TRANSISTORSFeatures:
Extremely Low RDS(on)
Compact Plastic Package
Fast Switching
Low Drive Current
..
IRFZ24N ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagePD - 91354AIRFZ24N®HEXFET Power MOSFETl Advanced Process TechnologyDl Dynamic dv/dt RatingV = 55VDS ..
IRFZ24NL ,55V Single N-Channel HEXFET Power MOSFET in a TO-262 packagePD - 9.1355BIRFZ24NS/L®HEXFET Power MOSFETl Advanced Process TechnologyDV = 55VDSSl Surface Mount ( ..
IRFZ24NPBF ,55V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications.The TO-220 package is universally preferred for allcommercial-industrial
ISL9R1560P2 ,15A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 CStealth™ fa ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The Stealth™ family o Operating Temperature . . . . . . . . . . . . . . . . . . . . ..
IRFZ20-IRFZ22
HEXFET TRANSISTORS
hhE D l] uassuse 00052.72 5 fl
INTERNATIONAL RECTIFI ER
INTE RNATIONAL. RECTI Fl E FR
Data Sheet No. PD-9.434B
T-39-11
HEXFET® "rAAlNllS3llEr'r'Cl)AE) lll%llFGeEiND
N-Channel
50 Volt
Power- MOSFETS
n IlFlllFGelliiilllEll
50 Volt, 0.1 Ohm HEXFET
T0-220AB Plastic Package
The HEXFET technology has expanded its product base to
serve the low voltage, very low Ros on) MOSFET transistor
requirements. International Retgtifiet's highly etficient
geometry and unique processing at the HEXFET have been
combined to create the lowest on resistance per device
performance. In addition to this feature all HEXFETs have
documented reliability and parts per million quality!
The HEXFETtransistors also offer all ofthe well established
advantages of MOSFETs such as voltage control, very fast
switching, ease of paralleling, and temperature stability of
the electrical parameters.
They are well suited for applications such as switching power
supplies, motor controls, inverters, choppers, audlo
amplifiers, high energy pulse circuits. and in systems that
are operated from low voltage batteries, such as automotive,
portable equipment, etc.
CASE STYLE AND DIMENSIONS
10,54(ih415)
-- 15.09 (0.594)
13.97 (0.550)
Product Summary
Part Number VDS RDS(on) ID
IRF220 50V 0.109 15A
IRFZ22 50V 0.120 14A
Features:
Extremely Low RDS(on)
Compact Plastic Package
Fast Switching
Low Drive Current
Ease of Paralleling
Excellent Temperature Stability
Parts Per Million Quality
$0 M10 "5)
"_-L-IQ-ir.--
2 " Iihl m - I0 " (0 IDS)
Ii: to uni J n (ous)
3 M to I19)
f rEiW3-MluM;e
Isomssu mm mum
" " "tir5tTi mm l - GATE
[12(0051)
DIA I 21(0048)
I "til lit]!
1 "lo IN)
ya to no) -
2 " to our»
, SEtmoN x-x
0 bt to 010) E
all io 016)
0919 to inn
--lu-,
ma In"
Case Style TO-220AB
Dimensions in Millimeter: and (Inches)
IIMODSS)
I IS (0015)
This Material Copyrighted By Its Respective Manufacturer
IRFZ20, IRF222 Devices
Absolute Maximum Ratings
Electrical Characteristics tii) TC. = 25°C (Unless Ot
_ Source
Dram Cummt
Current
Cunent
Linear Deming Facial
tg'gl,T,
Storage empemura Range
emperatura
hhE D lil 035505. 0000073 0 n
I NTERNATIONAL RECTIFIER
herwise Specified)
Pavamatot Typo Min. Typ Max. Units Tast Conditions
BVDSS Drain - Source Breakdown Voltage 101-220 60 - - V VGS = 0V
IHFDZ 60 - - V 10 " 250 PA
VGSUb) Gate Threshold Voltage ALL 2.0 - 4.0 V VDS n vas. ID a 250 “A
IGSS Gate-Soume Leakage Forwald AU. - - 600 nA VGS a 20V
ksss Gme-Souvoe Leakage Reverse ALL - - -600 nA Vos "-20V
'DSS Zero Gate Voltage Drain Current ALL - - 260 pA Vos 2 Max. Rating, vas - 0V
- - 1000 PA VDS = Max: Rating x 0.8, VGS = 0V, TC = 125°C
'D(on) On-Slme Dram Current Q) :23 :2 - - t VDS > 'D(onl x RDS(on)max.l VGS I 10V
R Statie len-Source tht-State Msistarum © IBF220 - 0.080 0.100 it
iNitonl mm - 0.110 0.120 n sz = tov, tD " 9.0A
Jig Forward Transctrnductance © ALL 6.0 6.0 - S(U) V95 > IM X RDSlon) max. ID = 9.0A
Ciss Input Capacitance ALL - 660 850 pF vos = ov. Vim = 2511,! = 1.0 MHz
Cos: Output Capacitance ALL - 250 350 pF Sac Fig. 10
" Ravens Transfer Capacitance AU. - 60 100 pF
td Wt Tum-On Daley Time ALI, - 15 30 ns Von a 25v, ID - em, A, - 500
tr Risa T1019 ALL - 45 90 n: See Rg. 17
'dmm TurreOff Delay Time ALL - 20 40 n: (MOSFET switching times are essentially Independent of
tt Fall Tlma ALL - 15 30 ns oparattng ttmtparatura)
A, 2:;gmcghgg: Gate-Draln) AU. - 12 17 nC 2Ni.lthhg, 1:31;3310 30:31:15; 1tta,
09, Gate-Sauvce Charge ALL - 9.0 .-. nC independent tot toperating temperature)
Ard Gata-Dtaln ("Miller") Charge ALL - 3.0 - nC
Lo Internal Drain Inductance - " - nH Measured from the Modified MOSFET
contad screw on tab symbol showing the
ALL to orrtttrr of die lmamal device
- 4.6 - nH Measured from tho Inductanetss
drain lead, 6mm (0.25 in.)
from package to center ot
Ls lmemal Sourca Inductance ALL - 7.5 - nH Maasurad tram the source
land, 6mm (0.25 In.) from
package to source bonding
Thermal Resistance
Rch JuntttiotrtirCastt AU. - - 3.12 KIW (4)
RthCS Case-to-Slnk ALL - 1.0 - KIW © Mounting surfaca fitrt. smooth, and greased.
RthJA JunetiorvtoAmbhnt ALL - - 80 KIW © Typical socket mount
This Material Copyrighted By Its Respective Manufacturer
't-39-11
