IRFZ14S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFZ20 ,HEXFET TRANSISTORSapplications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifi ..
IRFZ20 ,HEXFET TRANSISTORSME D I 0055053 0000072 ll I
INTERNATIONAL RECTIFIER
Data Sheet No. PD-9.434B
INTERNATIONAL ..
IRFZ22 ,HEXFET TRANSISTORSFeatures:
Extremely Low RDS(on)
Compact Plastic Package
Fast Switching
Low Drive Current
..
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IRFZ14S
60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
International
TOR, Rectifier
PD - 9.890A
|RFZ14S/L
Advanced Process Technology
Surface Mount (IRFZ14S)
Low-profile through-hole (IRFZ14L)
175°C Operating Temperature
Fast Switching
Description
Third Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designerwith an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
HEXFET® Power MOSFET
D l/DSS = 60V
RDS(on) = 0.209
ID = 10A
highest power capability and the lowest possible on- D 2 Pak TO-262
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRFZ14L) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ Tc = 25°C Continuous Drain Current, I/ss @ 10V© 10
ID @ TC = 100°C Continuous Drain Current, VGS @ ION/S 7.2 A
IDM Pulsed Drain Current C)6) 40
Pro @TA = 25°C Power Dissipation 3 7 W
PD @Tc = 25°C Power Dissipation 43 W
Linear Derating Factor 0.29 W/°C
Ves Gate-to-Source Voltage i 20 V
EAS Single Pulse Avalanche Energy©6) 47 mJ
dv/dt Peak Diode Recovery dv/dt ©S 4.5 V/ns
TJ Operating Junction and -55 to + 175 O
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
ReJC Junction-to-Case - 3.5 o C /W
ReJA Junction-to-Ambient ( PCB Mounted/steady-state)" - 4O
8/25/97
IRFZ14S/L
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 - - V VGS = 0V, ID = 250pA
AV(BR)DSS/ATJ Breakdown Voltage Temp. Coefrcient - 0.063 - V/°C Reference to 25°C, ID =1mA©
RDs(on) Static Drain-to-Source On-Resistance - - 0.20 f2 VGs =10V, ID = 6.0A ©
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDs = VGs, ID = 250pA
gig Forward Transconductance 2.4 - - S VDs = 25V, ID = 6.0A©
loss Drain-to-Source Leakage Current - - 25 pA l/os = 60V, VGS = 0V
- - 250 Vos = 48V, VGS = 0V, Tu = 150°C
less Gate-to-Source Forward Leakage - - 100 n A I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
% Total Gate Charge - - 11 ID = 10A
Qgs Gate-to-Source Charge - - 3.1 nC VDS = 48V
di Gate-to-Drain ("Miller") Charge - - 5.8 VGS = 10V, See Fig. 6 and 13 ©(0
tum) Turn-On Delay Time - 10 - VDD = 30V
tr Rise Time - 50 - ns ID = 10A
tum) Turn-Off Delay Time - 13 - R3 = 249
tf Fall Time - 19 - RD = 2.79, See Fig. 10 ©
LS Internal Source Inductance - 7.5 - nH Between lead, .
and center of die contact
Ciss Input Capacitance - 300 - VGs = 0V
Coss Output Capacitance - 160 - pF VDs = 25V
Crss Reverse Transfer Capacitance - 29 - f = 1.0MHz, See Fig. 5S
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 10 A showing the |—#
ISM Pulsed Source Current integral reverse G (tLl
(Body Diode) OD - - 4O p-n junction diode. s
VSD Diode Forward Voltage - - 1.6 V Tu = 25°C, Is = 10A, VGS = 0V co
trr Reverse Recovery Time - 70 140 ns Tu = 25°C, IF = 10A
er Reverse Recovery Charge - 200 400 nC di/dt = 100A/ps cos
ton Forward Turn-On Time Intrinsic tum-on time is negligible (tum-on is dominated by LS+LD)
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
© VDD = 25V, starting T: = 25°C, L = 548pH
Rs = 259, IAS = 10A. (See Figure 12)
© ISD S 10A, di/dt f 90A/ps, VDD S V(BR)DSS,
T J 3 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
co Pulse width 3 300ps; duty cycle s: 2%.
(5) Uses IRFZ14 data and test conditions
For recommended footprint and soldering techniques refer to application note #AN-994.
