IRFZ14PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRFZ14PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRFZ14PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR Rectifier
PD-9.507B
IRFZ14
HEXFET® Power MOSFET
. Dynamic dv/dt Ra ..
IRFZ14S ,60V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageapplications.Absolute Maximum RatingsParameter Max. UnitsI @ T = 25°C Continuous Drain Current, V @ ..
IRFZ20 ,HEXFET TRANSISTORSapplications such as switching power
supplies, motor controls, inverters, choppers, audio
amplifi ..
IRFZ20 ,HEXFET TRANSISTORSME D I 0055053 0000072 ll I
INTERNATIONAL RECTIFIER
Data Sheet No. PD-9.434B
INTERNATIONAL ..
ISL9R1560P2 ,15A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 CStealth™ fa ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The Stealth™ family o Operating Temperature . . . . . . . . . . . . . . . . . . . . ..
IRFZ14-IRFZ14PBF
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
PD-9.507B
International
1:912 Rectifier _ IRFZ14
HEXFET® Power MOSFET
o Dynamic dv/dt Rating
o 175°C Operating Temperature -
0 Fast Switching VDSS - 60V
0 Ease of Paralleling
o Simple Drive Requirements RDS(on) = 0.209
ID = 10A
Description
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the T0220 contribute to its wide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter Max. Units
lo @ To = 25°C Continuous Drain Current, I/ss @ 10 V 10
ID @ Tc LT..". 100°C Continuous Drain Current, Vss @ 10 V 7.2 A
10M Pulsed Drain Current (i) 40
PD @ Tc = 25°C Power Dissipation 43 W
Linear Derating Factor 0.29 WPC
VGs Gate-to-Source Voltage :20 V
EAs Single Pulse Avalanche Energy C2) 47 mJ
dv/dt Peak Diode Recovery dv/dt GB 4.5 V/ns
TJ Operating Junction and -55 to +175
TSTS Storage Temperature Range t
Soldering Temperature, for 10 seconds 300 (1 .6mm from case)
Mounting Torque, 6-32 or M3 screw 10 Ibfoin (1.1 N.m)
Thermal Resistance
Parameter Min. Typ, Max. Units
ReJC Junction-to-Case _ - - 3.5
Recs Case-to-Sink, Flat, Greased Surface , -- 0.50 - °C/W
ROJA Junction-to-Ambient I - - 62
iRFZ14
Electrical Characteristics tit TJ = 25°C (unless otherwise specified)
! Parameter Min. Typ. Max. Units Test Conditions
':' V(BR)Dss Drain-to-Source Breakdown Voltage 60 - - V I/as-HN, ID: 250pA
1 AV(8R)DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.063 - NPC; Reference to 25°C, ID: 1mA
‘ Roman) Static Drain-to-Source On-Resistance - - 0.20 Q Ves=10V, b=6.0A C4)
1 Vesnh) Gate Threshold Voltage 2.0 - 4.0 v 1hos=Vas, lo: 25OWA
ge Forward Transconductance 2.4 - .....- S VDs=25V, ID=6.OA ©
loss Drain-to-Source Leakage Current - - 25 pA VDS=60V’ VGS=0V
- - 250 VDs=48V, VGs=0V, TJ=150°C
1 less Gate-to-Source Forward Leakage - - 100 n A VGs=20V
j Gate-to-Source Reverse Leakage - - -100 VGs=-20V
1 ch Total Gate Charge - - 11 ID=1OA
Qgs Gate-to-Source Charge i - - 3.1 no Vos=48V
di Gate-to-Drain ("Miller") Charge 5 - - 5.8 veszmv See Fig. 6 and 13 ©
td(on) Turn-On Delay Time ! - 10 - VDD=3ov
_ tr Rise Time I - 50 - ns |D=10A
, tum) Turn-Off Delay Time - 13 - Rs--24f2
i tr Fall Time - 19 - RD=2.7Q See Figure 10 (40
i Lo Internal Drain Inductance - 4.5 - 2:21:93 .495 ') D
l nH from package GE )
1 Ls Internal Source Inductance - 7.5 - Ind denter6f
i die contact s
' Css Input Capacitance - 300 - VGs=OV
, Coss Output Capacitance - 160 - pF VDs=25V
i Crss Reverse Transfer Capacitance --.- 29 - f=1.0MHz See Figure 5
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units E Test Conditions
ls Continugus Source Current - - 10 ! MOSFET symbol D
(Body Diode) : showing the fig
ISM Pulsed Source Current - --.. 40 I integral reverse G :1.
(Body Diode) G). p-n junction diode. s
Vso Diode Forward Voltage - - 1.6 V TJ=2500, Is=10A, Vss=OV C4)
trr Reverse Recovery Time - 70 140 ns TJ=2SOC, IF=1OA
Orr Reverse Recovery Charge - 0.20 0.40 Mi) §di/dl=100A/us Ci)
ton Fo rward Turn-On Time Intrinsic turn-on time is neglegible (turn-on is dominated by Ls+Lp),
Notes:
Ci) Repetitive rating; pulse width limited by
max. ju notion temperature (See Figure 11)
© VDD=25V, starting TJ=25°C, L--548PH
Re=25£2, lAs=10A (See Figure 12)
© ISDS1OA, di/de90A/p1s, VDDSV(BR)DSS,
TJS17SOC
CE) Pulse width S. 300 Vs; duty cycle 32%.
