IRFY430 ,500V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) packageApplicationsneed for additional isolating material between the deviceRefer to Ceramic Version Parta ..
IRFZ14 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRFZ14 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR Rectifier
PD-9.507B
IRFZ14
HEXFET® Power MOSFET
. Dynamic dv/dt Ra ..
IRFZ14 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR Rectifier
PD-9.507B
IRFZ14
HEXFET® Power MOSFET
. Dynamic dv/dt Ra ..
IRFZ14PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRFZ14PBF ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
ISL9R1560P2 ,15A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 CStealth™ fa ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The Stealth™ family o Operating Temperature . . . . . . . . . . . . . . . . . . . . ..
IRFY430
500V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) package
International
IEZR Rectifier
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number RDS(on) ID Eyelets
IRFY430 1.5 Q 4.5A Glass
IRFY430M 1.5 Q 4.5A Glass
HEXFET® MOSFET technology is the key to International
Rectifier's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
PD - 94191
IRFY430,IRFY43OIVI
500V, N-CHANNEL
HEXFET@ MOSFET TECHNOLOGY
TO-257AA
Features:
ing, ease of paralleling and electrical parameter temperature I: Simple Drive Requirements
stability. They are well-suited for applications such as switch- " Ease of Paralleling
ing power supplies, motor controls, inverters, choppers, I: Hermetically Sealed
audio amplifiers, high energy pulse circuits, and virtually " Electrically Isolated
any application where high reliability is required. The u Glass Eyelets
HEXFETtransistor’stotally isolated package eliminates the n For Space Level Applications
need for additional isolating material between the device Refer to Ceramic Version Part
and the heatsink. This improves thermal efficiency and Numbers IRFY430C, IRFY430CM
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 4.5
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 2.8 A
IDM Pulsed Drain Current (O 18
PD @ TC = 25°C Max. Power Dissipation 75 W
Linear Derating Factor 0.6 W/°C
VGS Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy Q) 280 mJ
IAR Avalanche Current C) 4.5 A
EAR Repetitive Avalanche Energy C) 7.5 mJ
dv/dt Peak Diode Recovery dv/dt © 3.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300(0.063in./1.6mm from case for 10 sec)
Weight 3.3 (Typical) g
For footnotes refer to the last page
1
4/18/01
IRFY430, IRFY430M
International
TOR Rectifier
Electrical Characteristics @T] = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 500 - - V VGS = 0V, ID = 1.0mA
ABVDSS/ATJ Temperature Coefficient of Breakdown - 0.78 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 1.5 Q VGS = 10V, ID = 2.8A co
Resistance
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250PA
gm Forward Transconductance 1.5 - - S (O VDS > 15V, IDS = 2.8A Ci)
loss Zero Gate Voltage Drain Current - - 25 VDS= 400V ,VGs=0V
- - 250 pA VDs = 400V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
1GSS Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
Qg Total Gate Charge - - 29.5 VGS =10V, ID = 4.5A
Qgs Gate-to-Source Charge - - 4.6 nC VDS = 250V
Qgd Gate-to-Drain ('Miller') Charge - - 19.7
td(on) Turn-On Delay Time - - 35 VDD = 250V, ID = 4.5A,
tr Rise Time - - 30 RG = 7.59
td(off) Turn-Off Delay Time - - 55 ns
tf FaIITime - - 30
LS + LD Total Inductance - 6.8 - nH Measured from drainlead(6mm/0.25in.from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 650 - VGS = 0V, VDs = 25V
Cogs Output Capacitance - 135 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 65 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ls Continuous Source Current (Body Diode) - - 4.5 A
ISM Pulse Source Current (Body Diode) (D - - 18
VSD Diode Forward Voltage - - 1.4 V Tj = 25°C, Is = 4.5A, VGS = 0V ©
trr Reverse Recovery Time - - 900 nS T] = 25°C, IF = 4.5A, di/dt s 100A/ps
QRR Reverse Recovery Charge - - 7.0 pC VDD 3 50V ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 1.67
RthCS Case-to-sink - 0.21 - °C/W
RthJA Junction-to-Ambient - - 80 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
