IRFY240CM ,200V Single N-Channel Hi-Rel MOSFET in a TO-257AA packageApplicationsThe HEXFET transistor’s totally isolated package eliminatesthe need for additional isol ..
IRFY340 ,400V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) packageApplicationsneed for additional isolating material between the deviceRefer to Ceramic Version Parta ..
IRFY430 ,500V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) packageApplicationsneed for additional isolating material between the deviceRefer to Ceramic Version Parta ..
IRFZ14 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRFZ14 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR Rectifier
PD-9.507B
IRFZ14
HEXFET® Power MOSFET
. Dynamic dv/dt Ra ..
IRFZ14 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR Rectifier
PD-9.507B
IRFZ14
HEXFET® Power MOSFET
. Dynamic dv/dt Ra ..
ISL9N310AS3ST ,N-Channel Logic Level PWM Optimized UltraFET?Trench Power MOSFETsApplications• DC/DC converters•C (Typ) = 1800pFISSSOURCESOURCEDRAINDRAINDRAIN (FLANGE)GATE GATEDRAI ..
ISL9R1560P2 ,15A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 CStealth™ fa ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
IRFY240CM
200V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
PD-91289E
International
TOR, Rectifier
IRFY24OC,IRFY24OCM
POWER MOSFET 200V, N-CHANNEL
TH RU-HOLE (TO-257AA) HEXFET' MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on) ID Eyelets "sl' cs',
IRFY240C 0.18 Q 16A Ceramic N“
IRFY240CM 0.18 Q 16A Ceramic
HEXFET® MOSFET technology is the key to International TO-257AA
Rectitier's advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
resistance combined with high transconductance. HEXFET Features:
transistors also feature all of the well-established advantages Simple Drive Requirements
of MOSFETs, such as voltage control, very fast switching, Ease of Paralleling
ease of paralleling and electrical parameter temperature Hermetically Sealed
stability. They are well-suited for applications such as Electrically Isolated
switching power supplies, motor controls, inverters, Ceramic Eyelets
choppers, audio amplifiers, high energy pulse circuits, and Ideally Suited For Space Level
virtually any application where high reliability is required. Applications
The HEXFET transistor’s totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
t @ VGS = 10V, TC = 25°C Continuous Drain Current 16
t @ VGS = 10V, TC = 100''C Continuous Drain Current 10.2 A
IDM Pulsed Drain Current (D 64
PD @ TC = 25°C Max. Power Dissipation 100 W
Linear Derating Factor 0.8 W/°C
VGS Gate-to-Source Voltage AIO V
EAS Single Pulse Avalanche Energy © 580 mJ
IAR Avalanche Current C) 16 A
EAR Repetitive Avalanche Energy Ci) 10 mJ
dv/dt Peak Diode Recovery dv/dt © 5.0 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range °C
Lead Temperature 300(0.063in./1.6mm from case for 10 sec)
Weight 4.3 (Typical) g
For footnotes refer to the last page
1
02/06/08
IRFY240C, IRFY240CM
International
TOR Rectifier
Electrical Characteristics © Ti = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 200 - - V VGS = 0V, ID = 1.0mA
ABVDss/ATJ Temperature Coefficient of Breakdown - 0.29 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.18 Q VGS = 10V, ID = 10.2A ©
Resistance
Vegan) Gate Threshold Voltage 2.0 - 4.0 V VDs = Was, ID = 250pA
gfs Forward Transconductance 6.1 - - S VDs > 15V, log = 10.2A C4)
IDSS Zero Gate Voltage Drain Current - - 25 H A VDS= 160V NGS--0V
- - 250 VDS = 160V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 VGS = 20V
less Gate-to-Source Leakage Reverse - - -100 nA VGS = -20V
% Total Gate Charge - - 60 VGS =10V, ID = 16A
%s Gate-to-Source Charge - - 10.6 nC VDS =100V
di Gate-to-Drain ('Miller') Charge - - 37.6
td(on) Turn-On Delay Time - - 20 VDD = 100V, ID = 16A,
tr Rise Time - - 152 ns VGS =1OV, RG = 9.19
td(off) Turn-Off Delay Time - - 58
tt FallTime - - 67
LS + LD Total Inductance - 6.8 - nH Measured from dram lead (6mrn/0.2Nn.
from package) to source lead
(6mm/0.25in. from package)
Ciss Input Capacitance - 1300 - VGS = 0V, VDS = 25V
Cogs Output Capacitance - 400 - pF f: 1.0MHz
Crss Reverse Transfer Capacitance - 130 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ls Continuous Source Current (Body Diode) - - 16 A
ISM Pulse Source Current (Body Diode) CD - - 64
VSD Diode Forward Voltage - - 1.5 V T] = 25°C, ls = 16A, VGS = 0V @
trr Reverse Recovery Time - - 500 ns Tj = 25°C, IF = 16A, di/dt S 100A/gs
ORR Reverse Recovery Charge - - 5.3 pC VDD S 50V (4)
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by Ls + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 1.25
RthCS Case-to-sink - 0.21 - °C/W
RthJA Junction-to-Ambient - - 80 Typical socket mount
Nate: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
