IRFY140CM ,100V Single N-Channel Hi-Rel MOSFET in a TO-257AA packageApplicationsand the heatsink. This improves thermal efficiency andreduces drain capacitance.Absolu ..
IRFY240CM ,200V Single N-Channel Hi-Rel MOSFET in a TO-257AA packageApplicationsThe HEXFET transistor’s totally isolated package eliminatesthe need for additional isol ..
IRFY340 ,400V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) packageApplicationsneed for additional isolating material between the deviceRefer to Ceramic Version Parta ..
IRFY430 ,500V Single N-Channel HEXFET Power MOSFET in a Y-PAK (TO-257AB) packageApplicationsneed for additional isolating material between the deviceRefer to Ceramic Version Parta ..
IRFZ14 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageapplications at power dissipation levels to approximately 50 watts. The low
thermal resistance and ..
IRFZ14 ,60V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational
TOR Rectifier
PD-9.507B
IRFZ14
HEXFET® Power MOSFET
. Dynamic dv/dt Ra ..
ISL9N310AS3ST ,N-Channel Logic Level PWM Optimized UltraFET?Trench Power MOSFETsApplications• DC/DC converters•C (Typ) = 1800pFISSSOURCESOURCEDRAINDRAINDRAIN (FLANGE)GATE GATEDRAI ..
ISL9R1560P2 ,15A, 600V Stealth Diodeapplications. The o Operating Temperature . . . . . . . . . . . . . . . . . . . . 175 CStealth™ fa ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeApplicationsphase reduce loss in switching transistors. The soft Switch Mode Power Suppliesrecove ..
ISL9R1560PF2 ,15A, 600V Stealth DiodeFeatures Soft Recovery . . . . . . . . . . . . . . . . . . . . . . t / t > 1.2b aThe ISL9R1560PF2 ..
ISL9R1560S3ST ,15A, 600V Stealth Single Diodeapplications. The low I and short t phase reduce loss RM(REC) a Hard Switched PFC Boost Diodein sw ..
ISL9R18120G2 ,18A, 1200V Stealth Diodeapplications. The low I and short t phase reduce loss RM(REC) a Switch Mode Power Suppliesin switc ..
IRFY140CM
100V Single N-Channel Hi-Rel MOSFET in a TO-257AA package
International
IEZR Rectifier
POWER MOSFET
THRU-HOLE (TO-257AA)
Product Summary
Part Number RDS(on) ID Eyelets
IRFY140C 0.077 f2 16*A Ceramic
IRFY14OCM 0.077 Q 16*A Ceramic
HEXFET6 MOSFET technology is the key to International
Rectfer's advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor's totally isolated package eliminates the
PD - 91287C
IRFY140C,IRFY14OCIVI
100V, N-CHANNEL
HEXFET® MOSFET TECHNOLOGY
TO-257AA
Features:
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Ideally Suited For Space Level
need for additional isolating material between the device Applications
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
ID @ VGS = 10V, TC = 25°C Continuous Drain Current 16*
ID @ VGS = 10V, TC = 100°C Continuous Drain Current 16* A
IDM Pulsed Drain Current (O 64
PD @ TC = 25°C Max. Power Dissipation 100 W
Linear Derating Factor 0.8 W/°C
VGS Gate-to-Source Voltage :20 V
EAS Single Pulse Avalanche Energy Q) 230 ml
IAR Avalanche Current C) 16* A
EAR Repetitive Avalanche Energy C) 10 mJ
dv/dt Peak Diode Recovery dv/dt © 5.5 V/ns
TJ Operating Junction -55 to 150
TSTG Storage Temperature Range oC
Lead Temperature 300(0.063in./1.6mm from case for 10 sec)
Weight 4.3 (Typical) g
* Current is limited by pin diameter
For footnotes refer to the last page
1
4/18/01
IRFY140C, IRFY14OCM International
TOR Rectifier
Electrical Characteristics @T] = 25°C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BVDss Drain-to-Source Breakdown Voltage 100 - - V VGS = 0V, ID = 1.0mA
ABVDSS/ATJ Temperature Coefficient of Breakdown - 0.1 - V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on) Static Drain-to-Source On-State - - 0.077 f2 VGS = 10V, ID = 16A co
Resistance
VGS(th) Gate Threshold Voltage 2.0 - 4.0 V VDS = VGS, ID = 250pA
gm Forward Transconductance 9.1 - - S (O VDS > 15V, IDS = 16A ©
loss Zero Gate Voltage Drain Current - - 25 pA VDS= 80V ,VGs=OV
- - 250 VDs = 80V,
VGS = 0V, TJ = 125°C
less Gate-to-Source Leakage Forward - - 100 A VGS = 20V
1GSS Gate-to-Source Leakage Reverse - - -100 n VGS = -20V
Qg Total Gate Charge - - 59 VGS =1OV, ID = 16A
Qgs Gate-to-Source Charge - - 12 nC VDS = 50V
Qgd Gate-to-Drain ('Miller') Charge - - 30.7
td(on) Turn-On Delay Time - - 21 VDD = 50V, ID = 16A,
tr Rise Time - - 145 ns RG = 9.19
td(off) Turn-Off Delay Time - - 64
tf Fall Time - - 105
LS + LD Total Inductance - 6.8 - nH Measured from drain lead (6mm/0.25in.from
package) to source lead (6mm/0.25in. from
package)
Ciss Input Capacitance - 1660 - VGS = 0V, VDs = 25V
Cogs Output Capacitance - 550 - pF f= 1.0MHz
Crss Reverse Transfer Capacitance - 120 -
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
ls Continuous Source Current (Body Diode) - - 16 A
ISM Pulse Source Current (Body Diode) (D - - 100
VSD Diode Forward Voltage - - 1.5 V Tj = 25°C, Is = 16A, VGS = 0V ©
trr Reverse Recovery Time - - 400 nS T] = 25°C, IF = 16A, di/dt s 100A/ps
QRR Reverse Recovery Charge - - 2.4 pC VDD 3 50V ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible. Tum-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
RthJC Junction-to-Case - - 1.25
RthCS Case-to-sink - 0.21 - °C/W
RthJA Junction-to-Ambient - - 80 Typical socket mount
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
