IRFW710BTM ,400V N-Channel B-FET / Substitute of IRFW710AFeaturesThese N-Channel enhancement mode power field effect • 2.0A, 400V, R = 3.4Ω @V = 10 VDS(on) ..
IRFW720 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
IRFW720B ,400V N-Channel MOSFETIRFW720B / IRFI720BNovember 2001IRFW720B / IRFI720B400V N-Channel MOSFET
IRFW720BTM ,400V N-Channel B-FET / Substitute of IRFW720AIRFW720B / IRFI720BNovember 2001IRFW720B / IRFI720B400V N-Channel MOSFET
IRFW730 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
IRFW730B ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 5.5A, 400V, R = 1.0Ω @V = 10 VDS(on) ..
ISL98012 ,1.8V Input PWM Step-Up RegulatorApplications+85°C temperature range.• 1.8V to 15V Converters - OLEDPinout• 5V to 12V ConvertersISL9 ..
ISL98012IUZ , 1.8V Input PWM Step-Up Regulator
ISL9K3060G3 ,30A, 600V Stealth Dual Diode
ISL9K860P3 ,8A, 600V Stealth Dual Diode
ISL9K860P3 ,8A, 600V Stealth Dual Diode
ISL9N2357D3ST ,30V, 0.007 Ohm, 35A, N-Channel UltraFET ?Trench Power MOSFET
IRFW710BTM
400V N-Channel B-FET / Substitute of IRFW710A
IRFW710B / IRFI710B November 2001 IRFW710B / IRFI710B 400V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 2.0A, 400V, R = 3.4Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 7.7 nC) planar, DMOS technology. • Low Crss ( typical 6.0 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge. D !!!!!!!! D ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● 2 2 GS D -PAK I -PAK GS D !!!! !!!! IRFW Series IRFI Series S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFW710B / IRFI710B Units V Drain-Source Voltage 400 V DSS I - Continuous (T = 25°C) Drain Current 2.0 A D C - Continuous (T = 100°C) 1.3 A C I (Note 1) Drain Current - Pulsed 6.0 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 100 mJ AS I Avalanche Current (Note 1) 2.0 A AR E (Note 1) Repetitive Avalanche Energy 3.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 36 W C - Derate above 25°C 0.29 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 3.44 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
