IRFW650B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 28A, 200V, R = 0.085Ω @V = 10 VDS(on) ..
IRFW654B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 21A, 250V, R = 0.14Ω @V = 10 VDS(on) ..
IRFW710BTM ,400V N-Channel B-FET / Substitute of IRFW710AFeaturesThese N-Channel enhancement mode power field effect • 2.0A, 400V, R = 3.4Ω @V = 10 VDS(on) ..
IRFW720 ,400V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 400V, R = 1.75Ω @V = 10 VDS(on) ..
IRFW720B ,400V N-Channel MOSFETIRFW720B / IRFI720BNovember 2001IRFW720B / IRFI720B400V N-Channel MOSFET
IRFW720BTM ,400V N-Channel B-FET / Substitute of IRFW720AIRFW720B / IRFI720BNovember 2001IRFW720B / IRFI720B400V N-Channel MOSFET
ISL98001CQZ-275 , Triple Video Digitizer with Digital PLL
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ISL9K860P3 ,8A, 600V Stealth Dual Diode
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IRFW650B
200V N-Channel MOSFET
IRFW650B / IRFI650B November 2001 IRFW650B / IRFI650B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 28A, 200V, R = 0.085Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 95 nC) planar, DMOS technology. • Low Crss ( typical 75 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● 2 2 GS D -PAK I -PAK GS D IRFW Series IRFI Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFW650B / IRFI650B Units V Drain-Source Voltage 200 V DSS I - Continuous (T = 25°C) Drain Current 28 A D C - Continuous (T = 100°C) 17.7 A C I (Note 1) Drain Current - Pulsed 112 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 600 mJ AS I Avalanche Current (Note 1) 28 A AR E (Note 1) Repetitive Avalanche Energy 15.6 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 156 W C - Derate above 25°C 1.25 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 0.8 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. C, November 2001
