IRFW634B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.1A, 250V, R = 0.45Ω @V = 10 VDS(on) ..
IRFW640B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 18A, 200V, R = 0.18Ω @V = 10 VDS(on) ..
IRFW640B ,200V N-Channel MOSFETIRFW640B / IRFI640BNovember 2001IRFW640B / IRFI640B200V N-Channel MOSFET
IRFW644A , Advanced Power MOSFET
IRFW644B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 14A, 250V, R = 0.28Ω @V = 10 VDS(on) ..
IRFW650B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 28A, 200V, R = 0.085Ω @V = 10 VDS(on) ..
ISL98001CQZ-170 , Triple Video Digitizer with Digital PLL
ISL98001CQZ-170 , Triple Video Digitizer with Digital PLL
ISL98001CQZ-210 , Triple Video Digitizer with Digital PLL
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ISL98012 ,1.8V Input PWM Step-Up RegulatorApplications+85°C temperature range.• 1.8V to 15V Converters - OLEDPinout• 5V to 12V ConvertersISL9 ..
ISL98012IUZ , 1.8V Input PWM Step-Up Regulator
IRFW634B
250V N-Channel MOSFET
IRFW634B / IRFI634B November 2001 IRFW634B / IRFI634B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 8.1A, 250V, R = 0.45Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 29 nC) planar, DMOS technology. • Low Crss ( typical 20 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converter and switch mode power supplies. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● 2 2 GS D -PAK I -PAK GS D IRFW Series IRFI Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFW634B / IRFI634B Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 8.1 A D C - Continuous (T = 100°C) 5.1 A C I (Note 1) Drain Current - Pulsed 32.4 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 200 mJ AS I Avalanche Current (Note 1) 8.1 A AR E (Note 1) Repetitive Avalanche Energy 7.4 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 74 W C - Derate above 25°C 0.59 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 1.69 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
