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IRFW630B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 9.0A, 200V, R = 0.4Ω @V = 10 VDS(on) ..
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IRFW640B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 18A, 200V, R = 0.18Ω @V = 10 VDS(on) ..
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IRFW624B
250V N-Channel MOSFET
IRFW624B / IRFI624B November 2001 IRFW624B / IRFI624B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 4.1A, 250V, R = 1.1Ω @V = 10 V DS(on) GS transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 13.5 nC) planar, DMOS technology. • Low Crss ( typical 9.5 pF) This advanced technology has been especially tailored to • Fast switching minimize on-state resistance, provide superior switching • 100% avalanche tested performance, and withstand high energy pulse in the • Improved dv/dt capability avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies. D D !!!!!!!! ● ● ● ● ● ● ● ● ◀ ◀ ◀ ◀ ◀ ◀ ◀ ◀ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ▲ ● ● ● ● ● ● ● ● G!!!!!!!! ● ● ● ● ● ● ● ● 2 2 GS D -PAK I -PAK GS D IRFW Series IRFI Series !!!!!!!! S Absolute Maximum Ratings T = 25°C unless otherwise noted C Symbol Parameter IRFW624B / IRFI624B Units V Drain-Source Voltage 250 V DSS I - Continuous (T = 25°C) Drain Current 4.1 A D C - Continuous (T = 100°C) 2.6 A C I (Note 1) Drain Current - Pulsed 16.4 A DM V Gate-Source Voltage ± 30 V GSS E (Note 2) Single Pulsed Avalanche Energy 75 mJ AS I Avalanche Current (Note 1) 4.1 A AR E (Note 1) Repetitive Avalanche Energy 4.9 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 5.5 V/ns Power Dissipation (T = 25°C) * 3.13 W P A D Power Dissipation (T = 25°C) 49 W C - Derate above 25°C 0.39 W/°C T , T Operating and Storage Temperature Range -55 to +150 °C J stg Maximum lead temperature for soldering purposes, T 300 °C L 1/8" from case for 5 seconds Thermal Characteristics Symbol Parameter Typ Max Units R Thermal Resistance, Junction-to-Case -- 2.54 °C/W θJC R Thermal Resistance, Junction-to-Ambient * -- 40 °C/W θJA R Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W θJA * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Rev. B, November 2001
