IRFW550ATM ,100V N-Channel A-FETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyR = 0.04 ΩDS(on) Rugged Gate Oxide T ..
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IRFW634B ,250V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 8.1A, 250V, R = 0.45Ω @V = 10 VDS(on) ..
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IRFW550ATM
100V N-Channel A-FET
Operating Temperature A (Max.) @ VDS = 100V (Typ.)
Advanced Power MOSFET
Thermal Resistance
FEATURES* When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum RatingsC
IRFW/I550A©1999
Rev. B
