IRFW540ATM ,100V N-Channel A-FETFEATURESBV = 100 VDSSn Avalanche Rugged TechnologyR = 0.052 ΩDS(on) n Rugged Gate Oxide Tec ..
IRFW540ATM ,100V N-Channel A-FETIRFW/I540AAdvanced Power MOSFET
IRFW550A ,N-CHANNEL POWER MOSFETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyR = 0.04 ΩDS(on) Rugged Gate Oxide T ..
IRFW550A ,N-CHANNEL POWER MOSFETIRFW/I550AAdvanced Power MOSFET
IRFW550ATM ,100V N-Channel A-FETFEATURESBV = 100 VDSS Avalanche Rugged TechnologyR = 0.04 ΩDS(on) Rugged Gate Oxide T ..
IRFW610B ,200V N-Channel MOSFETFeaturesThese N-Channel enhancement mode power field effect • 3.3A, 200V, R = 1.5Ω @V = 10 VDS(on) ..
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IRFW540ATM
100V N-Channel A-FET
IRFW/I540A Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175℃ Operating Temperature Lower Leakage Current : 10 μA (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.)
Advanced Power MOSFET
Thermal Resistance
FEATURES When mounted on the minimum pad size recommended (PCB Mount).
Absolute Maximum Ratings2001
Rev. B1
